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Indium gallium aluminium nitride

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Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.

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References

Indium compounds
Indium(I)
Organoindium(I) compounds
Indium(I,III)
Indium(III)
Organoindium(III) compounds
  • In(C2H5)3
  • In(CH3)3
    • Gallium compounds
    Gallium(−V)
    Gallium(I)
    Gallium(II)
    Gallium(I,III)
    Gallium(III)
    Organogallium(III) compounds
  • Ga(C5H7O2)3
  • Ga(CH3)3
  • Ga(C2H5)3
    • Aluminium compounds
    Al(I)
    Organoaluminium(I) compoundsAl(C5(CH3)5)
    Al(II)
    Al(III)
    Alums
    Organoaluminium(III) compounds


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