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Voigt–Thomson law

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Voigt–Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:

ρ ( ϑ ) = ρ 0 + Δ ρ c o s 2 ϑ {\displaystyle \rho (\vartheta )=\rho _{0}+\Delta \rho \cdot cos^{2}\vartheta }

where:

ϑ   {\displaystyle \vartheta \ } is the angle of direction of current in relation to the direction of magnetic field
ρ 0   {\displaystyle \rho _{0}\ } is the initial resistivity
Δ ρ   {\displaystyle \Delta \rho \ } is the change of resistivity (proportional to MR ratio)

The equation can also be expressed as:

ρ ( ϑ ) = ρ c o s 2 ϑ + ρ s i n 2 ϑ {\displaystyle \rho (\vartheta )=\rho _{\parallel }\cdot cos^{2}\vartheta +\rho _{\perp }\cdot sin^{2}\vartheta }

where:

ρ   {\displaystyle \rho _{\parallel }\ } is the parallel component of resistivity
ρ   {\displaystyle \rho _{\perp }\ } is the perpendicular component

References

  1. Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics. 91 (10): 7532–7534. arXiv:cond-mat/0305687. Bibcode:2002JAP....91.7532N. doi:10.1063/1.1447875. S2CID 43762722.
  2. Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences. Harrison and Son. ISSN 0962-8444. Retrieved 2015-07-19.
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