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Photodiode: Revision history

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28 February 2023

  • curprev 19:0519:05, 28 February 2023 113.33.174.61 talk 30,256 bytes +282 The PPD (usually PNP) is used in CMOS active-pixel sensors; a precursor triple junction NPNP variant (JPA1975-127646) and a precursor double junction NPN varient(JPA1975-127647) both with a pinned constant light-lit substrate surface were invented at Sony on October 23, and a precursor PNP variant (JPA1975-134985) with a clocked top P layer was invented at Sony on November 10 in 1975 for use in CCD image sensors. undo Tag: Reverted

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