| Revision as of 12:02, 12 August 2011 editCheMoBot (talk | contribs)Bots141,565 edits Updating {{chembox}} (changes to watched fields - updated 'DrugBank_Ref', 'UNII_Ref', 'ChEMBL_Ref', 'ChEBI_Ref', 'KEGG_Ref', 'ChEBI_Ref') per Chem/Drugbox validation (report [[Wikipedia_talk:Wiki← Previous edit |
Latest revision as of 12:07, 24 October 2024 edit undoFranconkuls (talk | contribs)6 editsm Fixing misquoted value for bandgap (IOFFE suggests 2.17eV rather than 2.12eV). |
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| verifiedrevid = 401795907 |
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| verifiedrevid = 444428416 |
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| Name = Aluminium arsenide |
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| Name = Aluminium arsenide |
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| ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png |
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| ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png |
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| ImageSize = |
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| ImageSize = |
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| ImageName = |
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| OtherNames = |
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| OtherNames = |
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| Section1 = {{Chembox Identifiers |
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|Section1={{Chembox Identifiers |
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| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} |
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| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} |
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| ChemSpiderID = 81112 |
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| ChemSpiderID = 81112 |
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| InChI = 1/Al.As/rAlAs/c1-2 |
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| InChI = 1/Al.As/rAlAs/c1-2 |
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| SMILES = 123(14)15(38)262(4)132(6()68)(6)35 |
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| SMILES = # |
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| InChIKey = MDPILPRLPQYEEN-LYSWLDLJAW |
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| InChIKey = MDPILPRLPQYEEN-LYSWLDLJAW |
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| StdInChI_Ref = {{stdinchicite|correct|chemspider}} |
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| StdInChI_Ref = {{stdinchicite|correct|chemspider}} |
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| StdInChIKey = MDPILPRLPQYEEN-UHFFFAOYSA-N |
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| StdInChIKey = MDPILPRLPQYEEN-UHFFFAOYSA-N |
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| CASNo = 22831-42-1 |
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| CASNo = 22831-42-1 |
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| CASNo_Ref = {{cascite|correct|CAS}} |
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| CASNo_Ref = {{cascite|correct|CAS}} |
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| PubChem = 89859 |
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| PubChem = 89859 |
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| EINECS = 245-555-0 |
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}} |
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| Section2 = {{Chembox Properties |
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|Section2={{Chembox Properties |
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| Formula = AlAs |
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| Formula = |
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| MolarMass = 101.9031 g/mol |
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| Al=1 | As=1 |
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| MolarMass = 101.9031 g/mol |
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| Appearance = orange crystals |
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| Appearance = orange crystals |
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| Density = 3.72 g/cm<sup>3</sup> |
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| Density = 3.72 g/cm<sup>3</sup> |
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| Solubility = |
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| Solubility = reacts |
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| SolubleOther = reacts in ] |
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| MeltingPt = 1740 °C (2013 K) |
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| MeltingPtC = 1740 |
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| BandGap = 2.12 eV (indirect)<ref name=ioffe> |
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| BandGap = 2.17 eV (indirect)<ref name=ioffe>{{cite web | url = http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/index.html | work = Ioffe Database | title = Al<sub>x</sub>Ga<sub>1−x</sub>As | publisher = FTI im. A. F. Ioffe, RAN | location = Sankt-Peterburg }}</ref> |
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| ElectronMobility = 200 cm<sup>2</sup>/(V·s) (300 K) |
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| ElectronMobility = 200 cm<sup>2</sup>/(V·s) (300 K) |
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| ThermalConductivity = 0.9 W/(cm·K) (300 K) |
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| ThermalConductivity = 0.9 W/(cm·K) (300 K) |
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| RefractIndex = 3 (infrared) |
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| RefractIndex = 3 (infrared) |
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| Section3 = {{Chembox Structure |
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|Section3={{Chembox Structure |
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| Coordination = Tetrahedral |
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| Coordination = Tetrahedral |
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| CrystalStruct = ] |
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| CrystalStruct = ] |
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| SpaceGroup = ''T''<sup>2</sup><sub>d</sub>-''F''-4''3m'' |
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| SpaceGroup = ''T''<sup>2</sup><sub>d</sub>-''F''-4''3m'' |
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| LattConst_a = 566.0 pm |
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| Section7 = {{Chembox Hazards |
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|Section4={{Chembox Thermochemistry |
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| EUClass = |
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| NFPA-H = |
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| DeltaHf = -116.3 kJ/mol |
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| Entropy = 60.3 J/mol K |
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| NFPA-R = |
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|Section7={{Chembox Hazards |
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| RPhrases = |
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| NFPA-R = |
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| IDLH = Ca <ref name=PGCH>{{PGCH|0038}}</ref> |
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| REL = Ca C 0.002 mg/m<sup>3</sup> <ref name=PGCH/> |
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| PEL = TWA 0.010 mg/m<sup>3</sup><ref name=PGCH/> |
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| Section8 = {{Chembox Related |
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|Section8={{Chembox Related |
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| OtherAnions = |
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| OtherCations = |
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| OtherCations = |
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| OtherFunctn = ], ], ], ] |
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| OtherFunction = ], ], ], ] |
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| Function = semiconductor materials |
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| OtherFunction_label = semiconductor materials |
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| OtherCpds = }} |
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| OtherCompounds = }} |
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'''Aluminium arsenide''' or '''aluminum arsenide''' ({{Aluminium}}{{arsenic}}) is a ] with almost the same ] as ] and ] and wider ] than gallium arsenide. |
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'''Aluminium arsenide''' ({{chem2|auto=1|AlAs}}) is a ] with almost the same ] as ] and ] and wider ] than gallium arsenide. (AlAs) can form a superlattice with ] (]As) which results in its semiconductor properties.<ref>Guo, L. "Structural, Energetic, and Electronic Properties of Hydrogenated Aluminum Arsenide Clusters". ''Journal of Nanoparticle Research''. Vol. 13 Issue 5 p. 2029-2039. 2011.</ref> Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors, and other ] devices.<ref>S. Adachi, ''GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties''. (World Scientific, Singapore, 1994)</ref>{{page needed|date=August 2017}} |
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==Properties== |
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==Properties<ref name=berger>L. I. Berger "Semiconductor materials" CRC Press, 1996 ISBN 0-8493-8912-7, 9780849389122 (available on google books), p. 126</ref>== |
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It has the following properties:<ref name=berger>{{cite book | author = Berger, L. I. | title = Semiconductor Materials | publisher = CRC Press | year = 1996 | isbn = 978-0-8493-8912-2 | page = | url = https://archive.org/details/semiconductormat0000berg | url-access = registration }}</ref> |
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*] 5 µm/(°C*m) |
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*] 5 μm/(°C*m) |
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*] 417 K |
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*] 417 K |
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*Microhardness 5.0 GPa (50 g load) |
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*] 5.0 GPa (50 g load) |
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*Number of atoms in 1 cm<sup>3</sup>: (4.42-0.17x)·10<sup>22</sup><ref name="multiple">Dierks, S. {{Webarchive|url=https://web.archive.org/web/20131029211735/http://sauvignon.mit.edu/fitz/safety/aluminumarsenide.pdf |date=2013-10-29 }}. The Fitzgerald Group, MIT, 1994.</ref> |
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*] (7.55+0.26x)·10<sup>11</sup> dyn cm<sup>−2</sup><ref name="multiple"/> |
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*Hardness on the ]: ~ 5<ref name="multiple"/> |
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*Insolubility in H<sub>2</sub>O<ref name="multiple"/> |
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==Uses== |
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Aluminium arsenide is a III-V compound ] and is an advantageous material for the manufacture of ] devices, such as ]. |
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Aluminium arsenide can be prepared using well-known methods, such as ] techniques or melt-growth techniques. However, aluminium arsenide crystals prepared by these methods are generally unstable and generate ] (]]<sub>3</sub>) when exposed to moist air. |
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==Synthesis== |
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Little work has been reported on the preparation of aluminium arsenide, mainly because of the practical difficulties involved. Preparation from the melt is difficult because of the high ] of the compound (about 1,700 °C) and of the extreme reactivity of aluminium at this temperature. A few workers have prepared small crystals from the melt, and ] have also been produced. The best of this material has an impurity carrier density of the order of 10<sup>19</sup>/cm<sup>3</sup> and is p-type.<ref>Willardson, R., and Goering, H. (eds.), ''Compound Semiconductors'', pp. 1, 184 (Reinhold Pub. Corp., New York, 1962).</ref> |
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==Reactivity== |
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Aluminium arsenide is a stable compound; however, acid, acid fumes and moisture should be avoided. Hazardous polymerization will not occur. Decomposition of aluminium arsenide produces hazardous ] gas and ]. |
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==Toxicity== |
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The chemical, physical and toxicological properties of aluminium arsenide have not been thoroughly investigated and recorded. |
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Aluminium compounds have many commercial uses and are commonly found in industry. Many of these materials are active chemically and thus exhibit dangerous toxic and reactive properties. |
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==Effects of exposure== |
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Aluminium compounds have many commercial uses and are commonly found in industry. Many of these materials are active chemically and thus exhibit dangerous toxic and reactive properties. The chemical, physical and ] of aluminium arsenide have not been thoroughly investigated and recorded; however, there are some known ] and ] symptoms based on chemical delivery. |
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Inhalation of aluminium arsenide may cause acute irritation to the respiratory system. It may also cause chronic arsenic poisoning, ulceration of the nasal septum, liver damage and cancer/diseases of the blood, kidneys and nervous system. Aluminium arsenide is poisonous if ingested and may cause gastrointestinal and skin effects and acute ]. Chronic implications from ingestion include arsenic poisoning, gastrointestinal disturbances, liver damage, and cancer/disease of the blood, kidneys and nervous system. If applied to the skin, aluminium arsenide may cause acute irritation, but there are no chronic health effects recorded.<ref>Sax. ''Dangerous Properties of Industrial Materials''. Eighth edition. 2005.</ref>{{page needed|date=August 2017}} |
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==Special precautions== |
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Precautions to be taken in handling and storage: Store in a cool, dry place in tightly sealed containers. Ensure there is good ventilation. Open and handle container with care. AlAs reacts on contact with acids or moisture to give a host of volatile, highly toxic arsenic compounds such as ]. |
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==References== |
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==References== |
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