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Revision as of 04:37, 17 February 2012 editBeetstra (talk | contribs)Edit filter managers, Administrators172,031 edits Saving copy of the {{chembox}} taken from revid 477307276 of page Indium_nitride for the Chem/Drugbox validation project (updated: '').		Latest revision as of 18:27, 8 July 2023 edit DMacks (talk | contribs)Edit filter managers, Autopatrolled, Administrators186,268 edits guidechem headed for blacklist
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			{{primary sources|date=January 2016}}
	{{ambox | text = This page contains a copy of the infobox ({{tl|chembox}}) taken from revid of page ] with values updated to verified values.}}
	{{chembox		{{chembox
	| Watchedfields = changed		| Watchedfields = changed
	| verifiedrevid = 477001014		| verifiedrevid = 477313431
	| ImageFile = Wurtzite polyhedra.png		| ImageFile = Wurtzite polyhedra.png
	| ImageName =		| ImageName =
	| IUPACName =		| IUPACName =
	| OtherNames = Indium(III) nitride		| OtherNames = Indium(III) nitride
	| Section1 = {{Chembox Identifiers		|Section1={{Chembox Identifiers
	| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}		| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
	| ChemSpiderID = 105058		| ChemSpiderID = 105058
	| InChI = 1/In.N/rInN/c1-2		| InChI = 1/In.N/rInN/c1-2
	| SMILES = #N		| SMILES1 = .
			| SMILES2 = #N
	| InChIKey = NWAIGJYBQQYSPW-QCNKTVRGAR		| InChIKey = NWAIGJYBQQYSPW-QCNKTVRGAR
	| StdInChI_Ref = {{stdinchicite|correct|chemspider}}		| StdInChI_Ref = {{stdinchicite|correct|chemspider}}
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	| CASNo = 25617-98-5		| CASNo = 25617-98-5
	| CASNo_Ref = {{cascite|correct|CAS}}		| CASNo_Ref = {{cascite|correct|CAS}}
			| UNII_Ref = {{fdacite|correct|FDA}}
			| UNII = D66UAC005A
	| PubChem = 117560		| PubChem = 117560
	}}		}}
	| Section2 = {{Chembox Properties		|Section2={{Chembox Properties
	| Formula = InN		| Formula = InN
	| MolarMass = 128.83 g/mol		| MolarMass = 128.83 g/mol
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	| SolubleOther =		| SolubleOther =
	| Solvent =		| Solvent =
	| MeltingPt = 1100 °C		| MeltingPtC = 1100
	| BoilingPt =		| BoilingPt =
	| BandGap = 0.65 eV (300 K)		| BandGap = 0.65 eV (300 K)
	| ElectronMobility = 3200 cm<sup>2</sup>/(V*s) (300 K)		| ElectronMobility = 3200 cm<sup>2</sup>/(V.s) (300 K)
	| ThermalConductivity = 0.45 W/(cm*K) (300 K)		| ThermalConductivity = 45 W/(m.K) (300 K)
	| RefractIndex = 2.9		| RefractIndex = 2.9
	}}		}}
	| Section3 = {{Chembox Structure		|Section3={{Chembox Structure
	| CrystalStruct = ] (hexagonal)		| CrystalStruct = ] (hexagonal)
	| SpaceGroup = ''C''<sup>4</sup><sub>6v</sub>-''P''6<sub>3</sub>''mc''		| SpaceGroup = ''C''<sup>4</sup><sub>6v</sub>-''P''6<sub>3</sub>''mc''
	| Coordination = Tetrahedral		| Coordination = Tetrahedral
	<!--| LattConst_a = 353.3 pm		| LattConst_a = 354.5 pm
			| LattConst_c = 570.3 pm <ref>{{cite journal|last1=Pichugin|first1=I. G.|last2=Tlachala|first2=M.|date=1978|title=Rentgenovsky analiz nitrida indiya|script-title=ru:Рентгеновский анализ нитрида индия|trans-title=X-ray analysis of indium nitride|journal=Izvestiya Akademii Nauk SSSR: Neorganicheskie Materialy|script-journal=ru:Известия Академии наук СССР: Неорганические материалы|language=Russian|volume=14|issue=1|pages=175–176}}</ref>
	| LattConst_c = 569.3 pm-->
	| LattConst_alpha =		| LattConst_alpha =
	| LattConst_beta =		| LattConst_beta =
	| LattConst_gamma =		| LattConst_gamma =
	}}		}}
	| Section7 = {{Chembox Hazards		|Section7={{Chembox Hazards
	| ExternalMSDS =		| ExternalSDS =
	| EUIndex = Not listed
	| MainHazards = Irritant, hydrolysis to ]		| MainHazards = Irritant, hydrolysis to ]
	| NFPA-H =		| NFPA-H =
	| NFPA-F =		| NFPA-F =
	| NFPA-R =		| NFPA-R =
	| NFPA-O =		| NFPA-S =
	| FlashPt =		| FlashPt =
	}}		}}
	| Section8 = {{Chembox Related		|Section8={{Chembox Related
	| OtherAnions = ]<br/>]<br/>]		| OtherAnions = ]<br/>]<br/>]
	| OtherCations = ]<br/>]<br/>]		| OtherCations = ]<br/>]<br/>]
	| OtherCpds = ]<br/>]		| OtherCompounds = ]<br/>]
	}}		}}
	}}		}}
			'''Indium nitride''' ({{chem2|auto=1|InN}}) is a ] material which has potential application in ]<ref>{{cite book|last1=Nanishi|first1=Y.|last2=Araki|first2=T.|last3=Yamaguchi|first3=T.|date=2010|chapter=Molecular-beam epitaxy of InN|editor1-last=Veal|editor1-first=T. D.|editor2-last=McConville|editor2-first=C. F.|editor3-last=Schaff|editor3-first=W. J.|title=Indium Nitride and Related Alloys|publisher=CRC Press|page=31|isbn=978-1-138-11672-6}}</ref> and high speed electronics.<ref>{{cite book|last1=Yim|first1=J. W. L.|last2=Wu|first2=J.|date=2010|chapter=Optical properties of InN and related alloys|editor1-last=Veal|editor1-first=T. D.|editor2-last=McConville|editor2-first=C. F.|editor3-last=Schaff|editor3-first=W. J.|title=Indium Nitride and Related Alloys|publisher=CRC Press|page=266|isbn=978-1-138-11672-6}}</ref><ref>{{cite journal|last1=Christen|first1=Jürgen|last2=Gil|first2=Bernard|date=2014|title=Group III nitrides|journal=Physica Status Solidi C|volume=11|issue=2|page=238|bibcode=2014PSSCR..11..238C|doi=10.1002/pssc.201470041|doi-access=free}}</ref>
			The bandgap of InN has now been established as ~0.7 eV depending on temperature<ref>{{Cite journal|last1=Monemar|first1=B.|last2=Paskov|first2=P. P.|last3=Kasic|first3=A.|date=2005-07-01|title=Optical properties of InN—the bandgap question|url=https://www.sciencedirect.com/science/article/pii/S0749603605000558|journal=Superlattices and Microstructures|language=en|volume=38|issue=1|pages=38–56|doi=10.1016/j.spmi.2005.04.006|bibcode=2005SuMi...38...38M |issn=0749-6036}}</ref> (the obsolete value is 1.97 eV).
			The ] has been recently determined by high magnetic field measurements,<ref>{{cite journal|last1=Goiran|first1=Michel|last2=Millot|first2=Marius|last3=Poumirol|first3=Jean-Marie|last4=Gherasoiu|first4=Iulian|last5=Walukiewicz|first5=Wladek|last6=Leotin|first6=Jean|display-authors=4|date=2010|title=Electron cyclotron effective mass in indium nitride|journal=Applied Physics Letters|volume=96|issue=5|page=052117|bibcode=2010ApPhL..96e2117G|doi=10.1063/1.3304169}}</ref><ref>{{cite journal|last1=Millot|first1=Marius|last2=Ubrig|first2=Nicolas|last3=Poumirol|first3=Jean-Marie|last4=Gherasoiu|first4=Iulian|last5=Walukiewicz|first5=Wladek|last6=George|first6=Sylvie|last7=Portugall|first7=Oliver|last8=Léotin|first8=Jean|last9=Goiran|first9=Michel|last10=Broto|first10=Jean-Marc|display-authors=4|date=2011|title=Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy|journal=Physical Review B|volume=83|issue=12|page=125204|bibcode=2011PhRvB..83l5204M|doi=10.1103/PhysRevB.83.125204}}</ref> m* =0.055 m<sub>0</sub>.
			Alloyed with ], the ternary system ] has a direct bandgap span from the ] (0.69 eV) to the ] (3.4 eV).
			<!-- next para belongs in InGaN not here -->
			Currently there is research into developing solar cells using the ] based ]s. Using one or more alloys of ] (InGaN), an optical match to the ] can be achieved.{{citation needed|date=January 2016}} The ] of InN allows a ]s as long as 1900 ] to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: ] of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (], ]) has proved to be difficult.
			Thin layers of InN can be grown using ] (MOCVD).<ref name=inushima/>
			==Superconductivity==
			Thin polycrystalline films of indium nitride can be highly conductive and even ] at ] temperatures. The superconducting transition temperature T<sub>c</sub> depends on each sample's film structure and carrier density and varies from 0 K to about 3 K.<ref name=inushima/><ref name=Tiras2009>{{cite journal|last1=Tiras|first1=E.|last2=Gunes|first2=M.|last3=Balkan|first3=N.|last4=Airey|first4=R.|last5=Schaff|first5=W. J.|display-authors=4|date=2009|title=Superconductivity in heavily compensated Mg-doped InN|url=https://repository.essex.ac.uk/2240/1/063_1.pdf|journal=Applied Physics Letters|volume=94|issue=14|page=142108|bibcode=2009ApPhL..94n2108T|doi=10.1063/1.3116120}}</ref> With magnesium doping the T<sub>c</sub> can be 3.97 K.<ref name=Tiras2009/> The superconductivity persists under high magnetic field (few teslas), that differs from superconductivity in In metal which is quenched by fields of only 0.03 tesla. Nevertheless, the superconductivity is attributed to metallic indium chains<ref name=inushima>{{cite journal|last=Inushima|first=Takashi|date=2006|title=Electronic structure of superconducting InN|journal=Science and Technology of Advanced Materials|volume=7|issue=S1|pages=S112–S116|bibcode=2006STAdM...7S.112I|doi=10.1016/j.stam.2006.06.004|doi-access=free}}</ref> or nanoclusters, where the small size increases the critical magnetic field according to the ].<ref>{{cite journal|last1=Komissarova|first1=T. A.|last2=Parfeniev|first2=R. V.|last3=Ivanov|first3=S. V.|date=2009|title=Comment on 'Superconductivity in heavily compensated Mg-doped InN' |journal=Applied Physics Letters|volume=95|issue=8|page=086101|doi=10.1063/1.3212864|doi-access=free|bibcode=2009ApPhL..95h6101K}}</ref>
			==See also==
			*]
			==References==
			{{reflist}}
			==External links==
			*{{cite web|url=http://www.ioffe.ru/SVA/NSM/Semicond/InN/|title=InN – Indium nitride|author=<!--Not stated-->|date=n.d.|website=Semiconductors on NSM|publisher=Fiziko-tekhnichesky institut imeni A. F. Ioffe|access-date=2019-12-29}}
			{{Indium compounds}}
			{{Nitrides}}
			]
			]
			]
			]
			]