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	{{chembox		{{chembox
			| Verifiedfields = changed
	| verifiedrevid = 415857701
			| Watchedfields = changed
	| Name = Tantalum pentoxide<!-- please replace if not identical with the pagename -->
			| verifiedrevid = 437221973
	| ImageFile = Kristallstruktur Triuranoctoxid.png<!-- crystal structure is similar -->
			| Name = Tantalum pentoxide<!-- please replace if not identical with the pagename -->
	| Section1 = {{Chembox Identifiers
			| ImageFile = 66366-ICSD3.png
	| CASNo_Ref = {{cascite}}
			| IUPACName = Tantalum(V) oxide
			| SystematicName = Ditantalum pentaoxide
			| OtherNames =
			|Section1={{Chembox Identifiers
			| CASNo_Ref = {{cascite|correct|CAS}}
	| CASNo = 1314-61-0		| CASNo = 1314-61-0
			| UNII_Ref = {{fdacite|correct|FDA}}
	}}
			| UNII = OEZ64Z53M4
	| Section2 = {{Chembox Properties
			| PubChem = 518712
	| Formula = Ta<sub>2</sub>O<sub>5</sub>
			| ChemSpiderID_Ref = {{chemspidercite|changed|chemspider}}
	| MolarMass = 441.893 g/mol
			| ChemSpiderID = 452513
	| Solubility = insoluble
			| InChI = 1S/5O.2Ta
	| SolubleOther = insoluble in ], most ] <br> soluble in hot conc.]
			| SMILES = O=(=O)O(=O)=O
	| Density = 8.20 g/cm<sup>3</sup> <ref>Pradyot Patnaik. ''Handbook of Inorganic Chemicals''. McGraw-Hill, 2002, ISBN 0070494398</ref>
			}}
	| MeltingPt = 1872 °C
			|Section2={{Chembox Properties
	| Appearance = white, odorless powder}}
			| Formula = Ta<sub>2</sub>O<sub>5</sub>
	| EnergyGap = 4.2 eV
			| MolarMass = 441.893 g/mol
	| DielectricConstant = ~ 25
			| Solubility = negligible
			| SolubleOther = insoluble in organic solvents and most ]s, reacts with HF
			| Density = β-Ta<sub>2</sub>O<sub>5</sub> = 8.18 g/cm<sup>3</sup><ref name=properties>{{cite journal|last=Reisman|first=Arnold|author2=Holtzberg, Frederic |author3=Berkenblit, Melvin |author4= Berry, Margaret |title=Reactions of the Group VB Pentoxides with Alkali Oxides and Carbonates. III. Thermal and X-Ray Phase Diagrams of the System K<sub>2</sub>O or K<sub>2</sub>CO<sub>3</sub> with Ta<sub>2</sub>O<sub>5</sub>|journal=Journal of the American Chemical Society|date=20 September 1956|volume=78|issue=18|pages=4514–4520|doi=10.1021/ja01599a003}}</ref> <BR> α-Ta<sub>2</sub>O<sub>5</sub> = 8.37 g/cm<sup>3</sup>
			| MeltingPtC = 1872
			| Appearance = white, odorless powder
			| BandGap = 3.8–5.3 eV
			<!--| DielectricConstant = ~ 25 no such parameter-->
			| RefractIndex = 2.275
			| MagSus = {{val|-32.0e-6|u=cm<sup>3</sup>/mol}}
	}}		}}
			}}
	'''Tantalum pentoxide''' is Ta<sub>2</sub>O<sub>5</sub>, also known as ](V) oxide. Both ] and ] phases are known. Ta<sub>2</sub>O<sub>5</sub> is a high ], low absorption material useful for coatings in the near-] to ] spectra regions; it decomposes only at temperatures >1470 °C.
			'''Tantalum pentoxide''', also known as ](V) oxide, is the ] with the ] {{chem|Ta|2|O|5}}. It is a white solid that is insoluble in all solvents but is attacked by strong bases and ]. {{chem|Ta|2|O|5}} is an inert material with a high ] and low absorption (i.e. colourless), which makes it useful for coatings<!--one cannot really coat in a spectral region . in the near-] to ] spectra regions-->.<ref name=book>{{cite book |title= The Chemistry of Niobium and Tantalum|url= https://archive.org/details/chemistryofniobi0000fair|url-access= registration|last= Fairbrother|first= Frederick|year= 1967|publisher= Elsevier Publishing Company|location= New York|isbn= 978-0-444-40205-9|pages= –28}}</ref> It is also extensively used in the production of ], due to its high ].
	==History==		==Preparation==
	The metal oxide discovered by ] was obtained from minerals taken from ] (an igneous rock associated with ] or ]) at ], Sweden, and ]. The ] is also a source of tantalum oxide. ] contains approximately 70% of tantalum oxide, and ] contains approximately 10%.
	==Synthesis==		===Occurrence===
			Tantalum occurs in the minerals ] and ] (columbium being an archaic name for niobium), which occur in ]s, an igneous rock formation. Mixtures of columbite and tantalite are called ]. Tantalum was discovered in Tantalite in 1802 by ] at ], Sweden, and Kimoto, Finland. The minerals ] and ] contain approximately 70% and 10% Ta, respectively.
	There are several methods available for the synthesis of tantalum oxide. One method involves isolating tantalum pentoxide by crushing a concentrate of the mineral columbite-tantalite and fusing the powdered mineral with ] to give a slurry of mixed insoluble ] and ]s. The mixed acids are dissolved by passing anhydrous ] into the slurry and adding the stoichiometric quantity of ] to yield a salt. The salts can be separated by a liquid-liquid extraction process, using various ]s as the liquids.
			===Refining===
	:(FeMn)(NbTa)<sub>2</sub>O<sub>6</sub> + 6NaOH → Ta<sub>2</sub>O<sub>5</sub>&middot;7H<sub>2</sub>O + Nb<sub>2</sub>O<sub>5</sub>&middot;7H<sub>2</sub>O
			Tantalum ores often contain significant amounts of ], which is itself a valuable metal. As such, both metals are extracted so that they may be sold. The overall process is one of ] and begins with a ] step; in which the ore is treated with ] and ] to produce water-soluble ]s, such as the ]. This allows the metals to be separated from the various non-metallic impurities in the rock.
	:½Ta<sub>2</sub>O<sub>5</sub>&middot;7H<sub>2</sub>O + ½Nb<sub>2</sub>O<sub>5</sub>&middot;7H<sub>2</sub>O + 16KF → K<sub>2</sub>TaF<sub>7</sub> + K<sub>2</sub>NbF<sub>7</sub> + 2HF + 12KOH
	Or,
	:½Ta<sub>2</sub>O<sub>5</sub> + ½Nb<sub>2</sub>O<sub>5</sub> + 4KF + 10HF → K<sub>2</sub>TaF<sub>7</sub> + K<sub>2</sub>NbF<sub>7</sub> + 5H<sub>2</sub>O
	Once K<sub>2</sub>TaF<sub>7</sub> has been isolated, Ta can be extracted by the electrolysis of molten K<sub>2</sub>TaF<sub>7</sub>. This pure form of tantalum is then exposed to oxygen at temperatures above 1000 degrees Celsius, to form Ta<sub>2</sub>O<sub>5</sub>.		:(FeMn)(NbTa)<sub>2</sub>O<sub>6</sub> + 16 ] → H<sub>2</sub> + H<sub>2</sub> + ] + ] + 6 H<sub>2</sub>O
			The tantalum and niobium hydrogenfluorides are then removed from the ] solution by ] using ], such as ] or ]. This step allows the simple removal of various metal impurities (e.g. iron and manganese) which remain in the aqueous phase in the form of ]s. Separation of the tantalum and niobium is then achieved by ] adjustment. Niobium requires a higher level of acidity to remain soluble in the organic phase and can hence be selectively removed by extraction into less acidic water.
	It can also be synthesized by ] of its ]:
			The pure tantalum hydrogen fluoride solution is then neutralised with aqueous ] to give ] tantalum oxide (Ta<sub>2</sub>O<sub>5</sub>(H<sub>2</sub>O)<sub>x</sub>), which is ] to tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>) as described in these idealized equations:<ref>{{cite book|author=Anthony Agulyanski|editor=Anatoly Agulyanski|chapter=Fluorine chemistry in the processing of tantalum and niobium|title=Chemistry of Tantalum and Niobium Fluoride Compounds|year=2004|publisher=Elsevier|location=Burlington|isbn=9780080529028|edition=1st}}</ref>
	::2 Ta(OCH<sub>2</sub>CH<sub>3</sub>)<sub>5</sub> + 5 H<sub>2</sub>O → Ta<sub>2</sub>O<sub>5</sub> + 10 HOCH<sub>2</sub>CH<sub>3</sub>
	<!--but this is not the usual method-->
			: H<sub>2</sub> + 5 H<sub>2</sub>O + 7 ] → {{sfrac|1|2}} Ta<sub>2</sub>O<sub>5</sub>(H<sub>2</sub>O)<sub>5</sub> + 7 ]
	== Use ==
			: Ta<sub>2</sub>O<sub>5</sub>(H<sub>2</sub>O)<sub>5</sub> → Ta<sub>2</sub>O<sub>5</sub> + 5 H<sub>2</sub>O
	Ta<sub>2</sub>O<sub>5</sub> is used to make ]s in ], cell phones, and pagers, electronic circuitry; thin-film components; and high-speed tools. In the 1990s, there was a very strong interest to do research on tantalum oxide as a ] for ] capacitor applications. For example, ] (a Japanese company making DRAM) has put in a strong effort to improve ultrathin tantalum oxide films for DRAM applications. Subsequently in the 2000s, this strong interest has dropped very significantly. It is being used in on-chip MIM capacitors for RF CMOS integrated circuits. Due to its high index of refraction, Ta<sub>2</sub>O<sub>5</sub> has been utilized in the fabrication of the ] of many ]es.
			Natural pure tantalum oxide is known as the mineral ], although it is exceedingly rare.<ref>{{cite web|url=http://www.mindat.org/min-3884.html |title=Tantite: Tantite mineral information and data |website=Mindat.org |access-date=2016-03-03}}</ref>
	=== Reactions ===
	Ta<sub>2</sub>O<sub>5</sub> can be chlorinated to become TaCl<sub>5</sub> by heating a mixture of ] and ] in a sealed glass tube in a high pressure steel reaction vessel.
	:Ta<sub>2</sub>O<sub>5</sub> + 5CCl<sub>4</sub> → 2TaCl<sub>5</sub> + 5COCl<sub>2</sub>
			===From alkoxides===
	Ta<sub>2</sub>O<sub>5</sub> can be reduced several different ways, including the use of metallic reductants such as calcium and aluminum.
			Tantalum oxide is frequently used in electronics, often in the form of ]s. For these applications it can be produced by ] (or related techniques), which involves the ] of its volatile ]s or ]s:
	:Ta<sub>2</sub>O<sub>5</sub> + 2Al → Al<sub>2</sub>O<sub>3</sub> + TaO<sub>2</sub> + Ta
	:Ta<sub>2</sub>O<sub>5</sub> + Ca → CaO + TaO<sub>4</sub> + Ta
	These reactions can be further modified to yield pure tantalum via stoichiometry, thermal control and electrolysis.
			: ] + 5 H<sub>2</sub>O → Ta<sub>2</sub>O<sub>5</sub> + 10 EtOH
	Materials to avoid when dealing with tantalum pentoxide are strong ]s, ], ], ] and ]s.
			: 2 ] + 5 H<sub>2</sub>O → Ta<sub>2</sub>O<sub>5</sub> + 10 HCl
	==Structure==		== Structure and properties ==
			The crystal structure of tantalum pentoxide has been the matter of some debate. The bulk material is ],<ref name=temp>{{cite journal|last=Askeljung|first=Charlotta|author2=Marinder, Bengt-Olov |author3=Sundberg, Margareta |title=Effect of heat treatment on the structure of L-Ta<sub>2</sub>O<sub>5</sub>|journal=Journal of Solid State Chemistry|date=1 November 2003|volume=176|issue=1|pages=250–258|doi=10.1016/j.jssc.2003.07.003|bibcode = 2003JSSCh.176..250A }}</ref> being either ] or ]; with ]s being difficult to grow. As such ] has largely been limited to ], which provides less structural information.
	Both low and high temperature forms exist. The low temperature form is known as β-Ta<sub>2</sub>O<sub>5</sub>, and the high temperature form is known as α-Ta<sub>2</sub>O<sub>5</sub>. The transition point between these two forms has been reported as 1360 °C. The transition is slow but reversible. The structures of both forms consist of chains built from octahedral and pentagonal bipyramidal polyhedra sharing opposite vertices. These chains are further joined by sharing edges to yield the 3D structure.
			At least 2 ] are known to exist. A low temperature form, known as L- or β-Ta<sub>2</sub>O<sub>5</sub>, and the high temperature form known as H- or α-Ta<sub>2</sub>O<sub>5</sub>. The transition between these two forms is slow and reversible; taking place between 1000 and 1360&nbsp;°C, with a mixture of structures existing at intermediate temperatures.<ref name=temp /> The structures of both polymorphs consist of chains built from octahedral TaO<sub>6</sub> and pentagonal bipyramidal TaO<sub>7</sub> polyhedra sharing opposite vertices; which are further joined by edge-sharing.<ref>{{cite journal|last=Stephenson|first=N. C.|author2=Roth, R. S. |title=Structural systematics in the binary system Ta<sub>2</sub>O<sub>5</sub>–WO<sub>3</sub>. V. The structure of the low-temperature form of tantalum oxide L-Ta<sub>2</sub>O<sub>5</sub>|journal=Acta Crystallographica Section B|date=1971|volume=27|issue=5|pages=1037–1044|doi=10.1107/S056774087100342X|doi-access=|bibcode=1971AcCrB..27.1037S }}</ref><ref>{{cite book |title= Structural Inorganic Chemistry|last= Wells|first= A.F.|year= 1947|publisher= Clarendon Press|location= Oxford}}</ref> The overall crystal system is ] in both cases, with the ] of β-Ta<sub>2</sub>O<sub>5</sub> being identified as ''Pna2'' by single crystal X-ray diffraction.<ref>{{cite journal|last=Wolten|first=G. M.|author2=Chase, A. B. |title=Single-crystal data for β Ta<sub>2</sub>O<sub>5</sub> and A KPO<sub>3</sub>|journal=Zeitschrift für Kristallographie|date=1 August 1969|volume=129|issue=5–6|pages=365–368|doi=10.1524/zkri.1969.129.5-6.365|bibcode = 1969ZK....129..365W }}</ref><ref>{{cite journal |doi=10.1002/cber.19921250304 |title=Tantaloxide durch Gasphasenhydrolyse, Druckhydrolyse und Transportreaktion aus 2H-TaS<sub>2</sub>: Synthesen von TT-Ta<sub>2</sub>O<sub>5</sub> und T-Ta<sub>2</sub>O<sub>5</sub> und Kristallstruktur von T-Ta<sub>2</sub>O<sub>5</sub> |date=1992 |last1=Hummel |first1=Hans-U. |last2=Fackler |first2=Richard |last3=Remmert |first3=Peter |journal=Chemische Berichte |volume=125 |issue=3 |pages=551–556 }}</ref>
	==References==
	{{reflist}}
			A high pressure form (''Z''-Ta<sub>2</sub>O<sub>5</sub>) has also been reported, in which the Ta atoms adopt a 7 coordinate geometry to give a ] structure (space group C2).<ref>{{cite journal|last=Zibrov|first=I. P.|author2=Filonenko, V. P. |author3=Sundberg, M. |author4= Werner, P.-E. |title=Structures and phase transitions of B-Ta<sub>2</sub>O<sub>5</sub> and Z-Ta<sub>2</sub>O<sub>5</sub>: two high-pressure forms of Ta<sub>2</sub>O<sub>5</sub>|journal=Acta Crystallographica Section B|date=1 August 2000|volume=56|issue=4|pages=659–665|doi=10.1107/S0108768100005462|pmid=10944257 |s2cid=22330435 |doi-access=}}</ref>
	== Further reading ==
	{{Citation style|date=September 2007}}
			Purely amorphous tantalum pentoxide has a similar local structure to the crystalline polymorphs, built from TaO<sub>6</sub> and TaO<sub>7</sub> polyhedra, while the molten liquid phase has a distinct structure based on lower coordination polyhedra, mainly TaO<sub>5</sub> and TaO<sub>6</sub>.<ref>{{cite journal |last1=Alderman|first1=O. L. G.|last2=Benmore|first2=C.J.|last3=Neuefeind|first3=J.|last4=Coillet|first4=E.|last5=Mermet|first5=A.|last6=Martinez|first6=V.|last7=Tamalonis|first7=A.|last8=Weber|first8=R.|title=Amorphous tantala and its relationship with the molten state |journal=Physical Review Materials |date=2018 |volume=2 |issue=4 |page=043602 |doi=10.1103/PhysRevMaterials.2.043602 |bibcode=2018PhRvM...2d3602A |doi-access=free }}</ref>
	* http://chemlab.pc.maricopa.edu/periodic/Ta.html
	* Fairbrother, F. ''The Chemistry of Niobium and Tantalum''. Elsevier Publishing Company. New York, '''1967''', pp.&nbsp;1–28.
			The difficulty in forming material with a uniform structure has led to variations in its reported properties. Like many metal oxides Ta<sub>2</sub>O<sub>5</sub> is an ] and its ] has variously been reported as being between 3.8 and 5.3 eV, depending on the method of manufacture.<ref>{{cite journal|last=Kukli|first=Kaupo|author2=Aarik, Jaan |author3=Aidla, Aleks |author4=Kohan, Oksana |author5=Uustare, Teet |author6= Sammelselg, Väino |title=Properties of tantalum oxide thin films grown by atomic layer deposition|journal=Thin Solid Films|year=1995|volume=260|issue=2|pages=135–142|doi=10.1016/0040-6090(94)06388-5|bibcode = 1995TSF...260..135K }}</ref><ref>{{cite journal|last1=Fleming|first1=R. M.|last2=Lang|first2=D. V.|last3=Jones|first3=C. D. W.|last4=Steigerwald|first4=M. L.|last5=Murphy|first5=D. W.|last6=Alers|first6=G. B.|last7=Wong|first7=Y.-H.|last8=van Dover|first8=R. B.|last9=Kwo|first9=J. R.|last10=Sergent|first10=A. M.|title=Defect dominated charge transport in amorphous Ta<sub>2</sub>O<sub>5</sub> thin films|journal=Journal of Applied Physics|date=1 January 2000|volume=88|issue=2|pages=850|doi=10.1063/1.373747|bibcode = 2000JAP....88..850F }}</ref><ref>{{cite journal|last=Murawala|first=Prakash A.|author2=Sawai, Mikio |author3=Tatsuta, Toshiaki |author4=Tsuji, Osamu |author5=Fujita, Shizuo |author6= Fujita, Shigeo |title=Structural and Electrical Properties of Ta<sub>2</sub>O<sub>5</sub> Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source|journal=Japanese Journal of Applied Physics|year=1993|volume=32|issue=Part 1, No. 1B|pages=368–375|doi=10.1143/JJAP.32.368|bibcode = 1993JaJAP..32..368M |s2cid=97813703 }}</ref> In general the more ] the material the greater its observed band gap.
	* Wells A.F. ''Structural Inorganic Chemistry''. Oxford, the Clarendon Press. 1947.
			These observed values are significantly higher than those predicted by ] (2.3 - 3.8 eV).<ref>{{cite journal|last=Ramprasad|first=R.|title=First principles study of oxygen vacancy defects in tantalum pentoxide|journal=Journal of Applied Physics|date=1 January 2003|volume=94|issue=9|pages=5609–5612|doi=10.1063/1.1615700|bibcode = 2003JAP....94.5609R }}</ref><ref>{{cite journal|last=Sawada|first=H.|author2=Kawakami, K. |title=Electronic structure of oxygen vacancy in Ta<sub>2</sub>O<sub>5</sub>|journal=Journal of Applied Physics|date=1 January 1999|volume=86|issue=2|pages=956|doi=10.1063/1.370831|bibcode = 1999JAP....86..956S }}</ref><ref>{{cite journal|last=Nashed|first=Ramy|author2=Hassan, Walid M. I. |author3=Ismail, Yehea |author4= Allam, Nageh K. |title=Unravelling the interplay of crystal structure and electronic band structure of tantalum oxide (Ta<sub>2</sub>O<sub>5</sub>)|journal=Physical Chemistry Chemical Physics|volume=15|issue=5|pages=1352–7|year=2013|doi=10.1039/C2CP43492J|pmid=23243661|bibcode=2013PCCP...15.1352N}}</ref>
			Its ] is typically about 25<ref>{{cite journal|last=Macagno|first=V.|author2=Schultze, J.W. |title=The growth and properties of thin oxide layers on tantalum electrodes|journal=Journal of Electroanalytical Chemistry and Interfacial Electrochemistry|date=1 December 1984|volume=180|issue=1–2|pages=157–170|doi=10.1016/0368-1874(84)83577-7}}</ref> although values of over 50 have been reported.<ref>{{cite journal|last=Hiratani|first=M.|author2=Kimura, S. |author3=Hamada, T. |author4=Iijima, S. |author5= Nakanishi, N. |title=Hexagonal polymorph of tantalum–pentoxide with enhanced dielectric constant|journal=Applied Physics Letters|date=1 January 2002|volume=81|issue=13|pages=2433|doi=10.1063/1.1509861|bibcode = 2002ApPhL..81.2433H }}</ref> In general tantalum pentoxide is considered to be a ] material.
			== Reactions ==
			Ta<sub>2</sub>O<sub>5</sub> does not react appreciably with either HCl or HBr, however it will dissolve in ], and reacts with ] and HF according to the following equation:<ref>{{cite journal | last1 = Agulyansky | first1 = A | year = 2003| title = Potassium fluorotantalate in solid, dissolved and molten conditions | journal = J. Fluorine Chem. | volume = 123| issue = 2 | pages = 155–161 | doi = 10.1016/S0022-1139(03)00190-8 }}</ref><ref>{{cite book|last=Brauer|first=Georg|title=Handbook of preparative inorganic chemistry|year=1965|publisher=Academic Press|isbn=978-0-12-395591-3|pages=256}}</ref>
			:Ta<sub>2</sub>O<sub>5</sub> + 4 KHF<sub>2</sub> + 6 HF → 2 ]] + 5 H<sub>2</sub>O
			Ta<sub>2</sub>O<sub>5</sub> can be reduced to metallic Ta via the use of metallic reductants such as calcium and aluminium.
			:Ta<sub>2</sub>O<sub>5</sub> + 5 Ca → 2 Ta + 5 ]
			]s, solid-bodied epoxy-dipped type. Polarity is explicitly marked.]]
			== Uses ==
			=== In electronics ===
			Owing to its high ] and ], tantalum pentoxide has found a variety of uses in electronics, particularly in ]s. These are used in ], cell phones, and pagers, electronic circuitry; thin-film components; and high-speed tools. In the 1990s, interest grew in the use of tantalum oxide as a ] for ] capacitor applications.<ref>
			{{cite journal |author1=Ezhilvalavan, S. |author2=Tseng, T. Y. |year=1999
			| title = Preparation and properties of tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>) thin films for ultra large scale integrated circuits (ULSIs) application - a review
			| journal = Journal of Materials Science: Materials in Electronics
			| volume = 10 |issue=1 |pages=9–31 |doi=10.1023/A:1008970922635|s2cid=55644772 }}
			</ref><ref>
			{{cite journal |author1=Chaneliere, C |author2=Autran, J L |author3=Devine, R A B |author4=Balland, B |year=1998
			| title = Tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>) thin films for advanced dielectric applications
			| journal = Materials Science and Engineering: R
			| volume = 22 |issue=6 |pages=269–322 |doi=10.1016/S0927-796X(97)00023-5}}</ref>
			It is used in on-chip metal-insulator-metal capacitors for high frequency ] integrated circuits. Tantalum oxide may have applications as the charge trapping layer for ].<ref>
			{{cite journal |author=Wang, X|year=2004
			| title = A Novel MONOS-Type Nonvolatile Memory Using High-''κ'' Dielectrics for Improved Data Retention and Programming Speed
			| journal = IEEE Transactions on Electron Devices
			| volume = 51 |issue=4 |pages=597–602 |doi=10.1109/TED.2004.824684|display-authors=etal|bibcode = 2004ITED...51..597W }}</ref><ref>
			{{cite journal |author=Zhu, H|year=2013
			| title = Design and Fabrication of Ta<sub>2</sub>O<sub>5</sub> Stacks for Discrete Multibit Memory Application
			| journal = ]
			| volume = 12 |issue=6 |pages=1151–1157 |doi=10.1109/TNANO.2013.2281817|display-authors=etal|bibcode=2013ITNan..12.1151Z|s2cid=44045227
			}}</ref> There are applications of tantalum oxide in ].<ref>
			{{cite journal |author=Lee, M-.J|year=2011
			| title = A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta<sub>2</sub>O<sub>5−''x''</sub>/TaO<sub>2−''x''</sub> bilayer structures
			| journal = ] |volume=10 |issue=8
			|pages=625–630
			| doi = 10.1038/NMAT3070|pmid=21743450
			|display-authors=etal|bibcode = 2011NatMa..10..625L }}</ref>
			=== In optics ===
			Due to its high ], Ta<sub>2</sub>O<sub>5</sub> has been utilized in the fabrication of the ] of ]es.<ref name=book /><ref>{{cite book|title = Optical Materials: An Introduction to Selection and Application|chapter = Optical Glas Composition|first = Solomon|last = Musikant|publisher = CRC Press|year = 1985|page = 28|isbn = 978-0-8247-7309-0|chapter-url = https://books.google.com/books?id=iJEXMF3JBtQC&pg=PA28}}</ref>
			It can also be deposited as an ] with typical applications being antireflection and multilayer filter coatings in near ] to near ].
			<ref name="Materion">{{cite web |url=https://materion.com/resource-center/product-data-and-related-literature/inorganic-chemicals/oxides/tantalum-oxide-ta205-for-optical-coating |title=Tantalum Oxide for Optical Coating Applications|author=<!--Not stated--> |website=Materion |publisher= |access-date= April 1, 2021}}</ref>
			Ta<sub>2</sub>O<sub>5</sub> has also been found to have a high nonlinear ],<ref>{{cite journal |last1=Tai |first1=Chao-Yi |last2=Wilkinson |first2=James S. |last3=Perney |first3=Nicolas M. B. |last4=Netti |first4=M. Caterina |last5=Cattaneo |first5=F. |last6=Finlayson |first6=Chris E. |last7=Baumberg |first7=Jeremy J. |date=2004-10-18 |title=Determination of nonlinear refractive index in a Ta2O5 rib waveguide using self-phase modulation |url=https://opg.optica.org/oe/abstract.cfm?uri=oe-12-21-5110 |journal=Optics Express |language=EN |volume=12 |issue=21 |pages=5110–5116 |doi=10.1364/OPEX.12.005110 |pmid=19484065 |bibcode=2004OExpr..12.5110T |issn=1094-4087|doi-access=free }}</ref><ref name=":0">{{cite journal |last1=Jung |first1=Hojoong |last2=Yu |first2=Su-Peng |last3=Carlson |first3=David R. |last4=Drake |first4=Tara E. |last5=Briles |first5=Travis C. |last6=Papp |first6=Scott B. |date=2021-06-20 |title=Tantala Kerr nonlinear integrated photonics |url=https://opg.optica.org/optica/abstract.cfm?uri=optica-8-6-811 |journal=Optica |language=EN |volume=8 |issue=6 |pages=811–817 |doi=10.1364/OPTICA.411968 |issn=2334-2536|arxiv=2007.12958 |bibcode=2021Optic...8..811J |s2cid=220793938 }}</ref> on the order of three times that of ], which has led to interest in the utilization of Ta<sub>2</sub>O<sub>5</sub> in ]s. Ta<sub>2</sub>O<sub>5</sub> has been recently utilized as the material platform for the generation of ]<ref>{{cite journal |last1=Woods |first1=Jonathan R. C. |last2=Daykin |first2=Jake |last3=Tong |first3=Amy S. K. |last4=Lacava |first4=Cosimo |last5=Petropoulos |first5=Periklis |last6=Tropper |first6=Anne C. |last7=Horak |first7=Peter |last8=Wilkinson |first8=James S. |last9=Apostolopoulos |first9=Vasilis |date=2020-10-12 |title=Supercontinuum generation in tantalum pentoxide waveguides for pump wavelengths in the 900 nm to 1500 nm spectral region |url=https://opg.optica.org/abstract.cfm?URI=oe-28-21-32173 |journal=Optics Express |language=en |volume=28 |issue=21 |pages=32173–32184 |doi=10.1364/OE.403089 |pmid=33115180 |bibcode=2020OExpr..2832173W |issn=1094-4087|doi-access=free }}</ref><ref>{{cite journal |last1=Fan |first1=Ranran |last2=Lin |first2=Yuan-Yao |last3=Chang |first3=Lin |last4=Boes |first4=Andreas |last5=Bowers |first5=John |last6=Liu |first6=Jia-Wei |last7=Lin |first7=Chao-Hong |last8=Wang |first8=Te-Keng |last9=Qiao |first9=Junpeng |last10=Kuo |first10=Hao-Chung |last11=Lin |first11=Gong-Ru |last12=Shih |first12=Min-Hsiung |last13=Hung |first13=Yung-Jr |last14=Chiu |first14=Yi-Jen |last15=Lee |first15=Chao-Kuei |date=2021-04-12 |title=Higher order mode supercontinuum generation in tantalum pentoxide (Ta2O5) channel waveguide |journal=Scientific Reports |language=en |volume=11 |issue=1 |pages=7978 |doi=10.1038/s41598-021-86922-8 |issn=2045-2322 |pmc=8042067 |pmid=33846403|bibcode=2021NatSR..11.7978F }}</ref> and ]s<ref name=":0" /> in ] and ]. Through the addition of ] dopants in the deposition process, Ta<sub>2</sub>O<sub>5</sub> waveguide lasers have been presented for a variety of applications, such as remote sensing and ].<ref>{{cite journal |last1=Tong |first1=Amy S. K. |last2=Mitchell |first2=Colin J. |last3=Aghajani |first3=Armen |last4=Sessions |first4=Neil |last5=Senthil Murugan |first5=G. |last6=Mackenzie |first6=Jacob I. |last7=Wilkinson |first7=James S. |date=2020-09-01 |title=Spectroscopy of thulium-doped tantalum pentoxide waveguides on silicon |url=https://opg.optica.org/abstract.cfm?URI=ome-10-9-2201 |journal=Optical Materials Express |language=en |volume=10 |issue=9 |pages=2201 |doi=10.1364/OME.397011 |bibcode=2020OMExp..10.2201T |issn=2159-3930|doi-access=free }}</ref><ref>{{cite journal |last1=Aghajani |first1=A |last2=Murugan |first2=G S |last3=Sessions |first3=N P |last4=Apostolopoulos |first4=V |last5=Wilkinson |first5=J S |date=2015-06-17 |title=Spectroscopy of high index contrast Yb:Ta 2 O 5 waveguides for lasing applications |journal=Journal of Physics: Conference Series |volume=619 |issue=1 |pages=012031 |doi=10.1088/1742-6596/619/1/012031 |bibcode=2015JPhCS.619a2031A |issn=1742-6596|doi-access=free }}</ref><ref>{{cite journal |last1=Subramani |first1=Ananth Z. |last2=Oton |first2=Claudio J. |last3=Shepherd |first3=David P. |last4=Wilkinson |first4=James S. |date=November 2010 |title=Erbium-Doped Waveguide Laser in Tantalum Pentoxide |url=https://ieeexplore.ieee.org/document/5560730 |journal=IEEE Photonics Technology Letters |volume=22 |issue=21 |pages=1571–1573 |doi=10.1109/LPT.2010.2072495 |bibcode=2010IPTL...22.1571S |s2cid=28849615 |issn=1041-1135}}</ref>
			==References==
			{{reflist|30em}}
	{{Tantalum compounds}}		{{Tantalum compounds}}
			{{Oxides}}
	{{DEFAULTSORT:Tantalum Pentoxide}}		{{DEFAULTSORT:Tantalum Pentoxide}}
	]		]
	]		]
			]
	]
	]
	]
	]
	]
	]
	]