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Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2025
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e

The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe, by companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The 1 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometers wide.

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.

Products featuring 1.0 μm manufacturing process

• NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.
• NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.
• Intel 80386 CPU launched in 1985 was manufactured using this process.
• Intel uses this process on the CHMOS III-E technology.
• Intel uses this process on the CHMOS IV technology.

References

1. ^ Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 19 April 2015. Retrieved 11 May 2012.
2. Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.
3. Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
4. Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
5. "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
6. Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
7. Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11

External links

• Brief timeline of microprocessor development

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