 | This article is an orphan, as no other articles link to it. Please introduce links to this page from related articles; try the Find link tool for suggestions. (December 2024) |
Dina H. Triyoso is an American materials scientist, and an expert on high-κ dielectrics and their applications in semiconductor-based electronics, and more generally on materials and processes for electronic devices. She works for Tokyo Electron (TEL), in New York.
Triyoso was a student of chemical engineering at Texas A&M University, where she received her Ph.D. in 2000, advised by Cellular engineer Theresa Good. She worked for Motorola Semiconductor Products and its spin-off Freescale Semiconductor, and then for GlobalFoundries, before taking her present position at Tokyo Electron in 2019.
She was named to the 2025 class of IEEE Fellows "for contributions to high-k metal gate complementary metal-oxide-semiconductor technology".
References
- ^ IEEE Fellow Class of 2025 (PDF), IEEE, retrieved 2024-12-23
- ^ "Dina Triyoso", IEEE Xplore, IEEE, November 27, 2007, retrieved 2024-12-23
- Theresa Good, University of Maryland Baltimore County, retrieved 2024-12-23; includes listing of former students
- Speaker biography: Material Innovation in the Atomic Scale Era – An Industry Perspective, National University of Singapore College of Design & Engineering, September 23, 2024, retrieved 2024-12-23
External links
- Dina Triyoso publications indexed by Google Scholar