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TiS3 has a layered crystal structure, where the layers are weakly bonded to each other and can be exfoliated with an adhesive tape. The exfoliated layers have potential applications in ultrathin field-effect transistors.
Synthesis
Millimeter-long crystalline whiskers of TiS3 can be grown by chemical vapor transport at ca. 500 °C, using excess sulfur as the transporting gas.
Properties
TiS3 is an n-type semiconductor with an indirect bandgap of about 1 eV. Its individual layers are made of TiS atomic chains; hence they are anisotropic and their properties depend on the in-plane orientation. For example, in the same sample, electron mobility can be 80 cm/(V·s) along the b-axis and 40 cm/(V·s) along the a-axis.
References
^ Gorochov, O.; Katty, A.; Le Nagard, N.; Levy-Clement, C.; Schleich, D.M. (1983). "Photoelectrochemical study of TiS3 in aqueous solution". Materials Research Bulletin. 18: 111–118. doi:10.1016/0025-5408(83)90178-2.