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| Names | |
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| IUPAC name Scandium nitride | |
| Other names
Azanylidynescandium Nitridoscandium | |
| Identifiers | |
| CAS Number | |
| 3D model (JSmol) | |
| ChemSpider | |
| ECHA InfoCard | 100.042.938 
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| EC Number |
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| PubChem CID | |
| CompTox Dashboard (EPA) | |
InChI
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SMILES
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| Properties | |
| Chemical formula | ScN |
| Molar mass | 58.963 |
| Density | 4.4 g/cm |
| Melting point | 2,600 °C (4,710 °F; 2,870 K) |
| Hazards | |
| GHS labelling: | |
| Pictograms | 
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| Signal word | Danger |
| Hazard statements | H228 |
| Related compounds | |
| Other anions | Scandium phosphide Scandium arsenide Scandium antimonide Scandium bismuthide |
| Other cations | Yttrium nitride Lutetium nitride |
| Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). Infobox references | |
Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.
References
- ^ Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
- ^ Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
- Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". International Journal of Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
- Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2". Japanese Journal of Applied Physics. 45 (2): L83–L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID 121206924.
| Scandium compounds | |
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