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Boron nitride

Names
IUPAC name Boron nitride
Identifiers
CAS Number	10043-11-5
3D model (JSmol)	Interactive image
ChEBI	CHEBI:50883
ChemSpider	59612
ECHA InfoCard	100.030.111
EC Number	233-136-6
Gmelin Reference	216
MeSH	Elbor
PubChem CID	66227
RTECS number	ED7800000
UNII	2U4T60A6YD
CompTox Dashboard (EPA)	DTXSID5051498
InChI InChI=1S/BN/c1-2Key: PZNSFCLAULLKQX-UHFFFAOYSA-N InChI=1S/B2N2/c1-3-2-4-1Key: AMPXHBZZESCUCE-UHFFFAOYSA-N InChI=1S/B3N3/c1-4-2-6-3-5-1Key: WHDCVGLBMWOYDC-UHFFFAOYSA-N InChI=1/BN/c1-2Key: PZNSFCLAULLKQX-UHFFFAOYAL
SMILES B#N
Properties
Chemical formula	BN
Molar mass	24.82 g/mol
Appearance	Colorless crystals
Density	2.1 g/cm (h-BN); 3.45 g/cm (c-BN)
Melting point	2,973 °C (5,383 °F; 3,246 K) sublimates (c-BN)
Solubility in water	Insoluble
Electron mobility	200 cm/(V·s) (c-BN)
Refractive index (nD)	1.8 (h-BN); 2.1 (c-BN)
Structure
Crystal structure	Hexagonal, sphalerite, wurtzite
Thermochemistry
Heat capacity (C)	19.7 J/(K·mol)
Std molar entropy (S298)	14.8 J/K mol
Std enthalpy of formation (ΔfH298)	−254.4 kJ/mol
Gibbs free energy (ΔfG)	−228.4 kJ/mol
Hazards
GHS labelling:
Pictograms
Signal word	Warning
Hazard statements	H319, H335, H413
Precautionary statements	P261, P264, P271, P273, P280, P304+P340, P305+P351+P338, P312, P337+P313, P403+P233, P405, P501
NFPA 704 (fire diamond)	0 0 0
Related compounds
Related compounds	Boron arsenide Boron carbide Boron phosphide Boron trioxide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). N verify (what is  ?) Infobox references

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic (zincblende aka sphalerite structure) variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.

Because of excellent thermal and chemical stability, boron nitride ceramics are used in high-temperature equipment and metal casting. Boron nitride has potential use in nanotechnology.

History

Boron nitride was discovered by chemistry teacher of the Liverpool Institute William Henry Balmain [de] in 1842 via reduction of boric acid with charcoal in the presence of potassium cyanide.

This section needs expansion. You can help by adding to it. (November 2024)

Structure

Boron nitride exists in multiple forms that differ in the arrangement of the boron and nitrogen atoms, giving rise to varying bulk properties of the material.

Amorphous form (a-BN)

The amorphous form of boron nitride (a-BN) is non-crystalline, lacking any long-distance regularity in the arrangement of its atoms. It is analogous to amorphous carbon.

All other forms of boron nitride are crystalline.

Hexagonal form (h-BN)

The most stable crystalline form is the hexagonal one, also called h-BN, α-BN, g-BN, and graphitic boron nitride. Hexagonal boron nitride (point group = D_3h; space group = P6₃/mmc) has a layered structure similar to graphite. Within each layer, boron and nitrogen atoms are bound by strong covalent bonds, whereas the layers are held together by weak van der Waals forces. The interlayer "registry" of these sheets differs, however, from the pattern seen for graphite, because the atoms are eclipsed, with boron atoms lying over and above nitrogen atoms. This registry reflects the local polarity of the B–N bonds, as well as interlayer N-donor/B-acceptor characteristics. Likewise, many metastable forms consisting of differently stacked polytypes exist. Therefore, h-BN and graphite are very close neighbors, and the material can accommodate carbon as a substituent element to form BNCs. BC₆N hybrids have been synthesized, where carbon substitutes for some B and N atoms. Hexagonal boron nitride monolayer is analogous to graphene, having a honeycomb lattice structure of nearly the same dimensions. Unlike graphene, which is black and an electrical conductor, h-BN monolayer is white and an insulator. It has been proposed for use as an atomic flat insulating substrate or a tunneling dielectric barrier in 2D electronics. .

Cubic form (c-BN)

Cubic boron nitride has a crystal structure analogous to that of diamond. Consistent with diamond being less stable than graphite, the cubic form is less stable than the hexagonal form, but the conversion rate between the two is negligible at room temperature, as it is for diamond. The cubic form has the sphalerite crystal structure (space group = F43m), the same as that of diamond (with ordered B and N atoms), and is also called β-BN or c-BN.

Wurtzite form (w-BN)

The wurtzite form of boron nitride (w-BN; point group = C_6v; space group = P6₃mc) has the same structure as lonsdaleite, a rare hexagonal polymorph of carbon. As in the cubic form, the boron and nitrogen atoms are grouped into tetrahedra. In the wurtzite form, the boron and nitrogen atoms are grouped into 6-membered rings. In the cubic form all rings are in the chair configuration, whereas in w-BN the rings between 'layers' are in boat configuration. Earlier optimistic reports predicted that the wurtzite form was very strong, and was estimated by a simulation as potentially having a strength 18% stronger than that of diamond. Since only small amounts of the mineral exist in nature, this has not yet been experimentally verified. Its hardness is 46 GPa, slightly harder than commercial borides but softer than the cubic form of boron nitride.

• Hexagonal form (h-BN)
  hexagonal analogous to graphite
• Cubic form (c-BN)
  sphalerite structure
  analogous to diamond
• Wurtzite form (w-BN)
  wurtzite structure
  analogous to lonsdaleite

Properties

Physical

The partly ionic structure of BN layers in h-BN reduces covalency and electrical conductivity, whereas the interlayer interaction increases resulting in higher hardness of h-BN relative to graphite. The reduced electron-delocalization in hexagonal-BN is also indicated by its absence of color and a large band gap. Very different bonding – strong covalent within the basal planes (planes where boron and nitrogen atoms are covalently bonded) and weak between them – causes high anisotropy of most properties of h-BN.

For example, the hardness, electrical and thermal conductivity are much higher within the planes than perpendicular to them. On the contrary, the properties of c-BN and w-BN are more homogeneous and isotropic.

Those materials are extremely hard, with the hardness of bulk c-BN being slightly smaller and w-BN even higher than that of diamond. Polycrystalline c-BN with grain sizes on the order of 10 nm is also reported to have Vickers hardness comparable or higher than diamond. Because of much better stability to heat and transition metals, c-BN surpasses diamond in mechanical applications, such as machining steel. The thermal conductivity of BN is among the highest of all electric insulators (see table).

Boron nitride can be doped p-type with beryllium and n-type with boron, sulfur, silicon or if co-doped with carbon and nitrogen. Both hexagonal and cubic BN are wide-gap semiconductors with a band-gap energy corresponding to the UV region. If voltage is applied to h-BN or c-BN, then it emits UV light in the range 215–250 nm and therefore can potentially be used as light-emitting diodes (LEDs) or lasers.

Little is known on melting behavior of boron nitride. It degrades at 2973 °C, but melts at elevated pressure.

Thermal stability

Hexagonal and cubic BN (and probably w-BN) show remarkable chemical and thermal stabilities. For example, h-BN is stable to decomposition at temperatures up to 1000 °C in air, 1400 °C in vacuum, and 2800 °C in an inert atmosphere. The reactivity of h-BN and c-BN is relatively similar, and the data for c-BN are summarized in the table below.

Thermal stability of c-BN can be summarized as follows:

• In air or oxygen: B₂O₃ protective layer prevents further oxidation to ~1300 °C; no conversion to hexagonal form at 1400 °C.
• In nitrogen: some conversion to h-BN at 1525 °C after 12 h.
• In vacuum (10 Pa): conversion to h-BN at 1550–1600 °C.

Chemical stability

Boron nitride is not attacked by the usual acids, but it is soluble in alkaline molten salts and nitrides, such as LiOH, KOH, NaOH-Na₂CO₃, NaNO₃, Li₃N, Mg₃N₂, Sr₃N₂, Ba₃N₂ or Li₃BN₂, which are therefore used to etch BN.

Thermal conductivity

The theoretical thermal conductivity of hexagonal boron nitride nanoribbons (BNNRs) can approach 1700–2000 W/(m⋅K), which has the same order of magnitude as the experimental measured value for graphene, and can be comparable to the theoretical calculations for graphene nanoribbons. Moreover, the thermal transport in the BNNRs is anisotropic. The thermal conductivity of zigzag-edged BNNRs is about 20% larger than that of armchair-edged nanoribbons at room temperature.

Mechanical properties

BN nanosheets consist of hexagonal boron nitride (h-BN). They are stable up to 800°C in air. The structure of monolayer BN is similar to that of graphene, which has exceptional strength, a high-temperature lubricant, and a substrate in electronic devices.

The anisotropy of Young's modulus and Poisson's ratio depends on the system size. h-BN also exhibits strongly anisotropic strength and toughness, and maintains these over a range of vacancy defects, showing that the anisotropy is independent to the defect type.

Natural occurrence

In 2009, cubic form (c-BN) was reported in Tibet, and the name qingsongite proposed. The substance was found in dispersed micron-sized inclusions in chromium-rich rocks. In 2013, the International Mineralogical Association affirmed the mineral and the name.

Synthesis

Preparation and reactivity of hexagonal BN

Hexagonal boron nitride is obtained by the treating boron trioxide (B₂O₃) or boric acid (H₃BO₃) with ammonia (NH₃) or urea (CO(NH₂)₂) in an inert atmosphere:

B₂O₃ + 2 NH₃ → 2 BN + 3 H₂O (T = 900 °C)

B(OH)₃ + NH₃ → BN + 3 H₂O (T = 900 °C)

B₂O₃ + CO(NH₂)₂ → 2 BN + CO₂ + 2 H₂O (T > 1000 °C)

B₂O₃ + 3 CaB₆ + 10 N₂ → 20 BN + 3 CaO (T > 1500 °C)

The resulting disordered (amorphous) material contains 92–95% BN and 5–8% B₂O₃. The remaining B₂O₃ can be evaporated in a second step at temperatures > 1500 °C in order to achieve BN concentration >98%. Such annealing also crystallizes BN, the size of the crystallites increasing with the annealing temperature.

h-BN parts can be fabricated inexpensively by hot-pressing with subsequent machining. The parts are made from boron nitride powders adding boron oxide for better compressibility. Thin films of boron nitride can be obtained by chemical vapor deposition from boron trichloride and nitrogen precursors. ZYP Coatings also has developed boron nitride coatings that may be painted on a surface. Combustion of boron powder in nitrogen plasma at 5500 °C yields ultrafine boron nitride used for lubricants and toners.

Boron nitride reacts with iodine fluoride to give NI₃ in low yield. Boron nitride reacts with nitrides of lithium, alkaline earth metals and lanthanides to form nitridoborates. For example:

Li₃N + BN → Li₃BN₂

Intercalation of hexagonal BN

Various species intercalate into hexagonal BN, such as NH₃ intercalate or alkali metals.

Preparation of cubic BN

c-BN is prepared analogously to the preparation of synthetic diamond from graphite. Direct conversion of hexagonal boron nitride to the cubic form has been observed at pressures between 5 and 18 GPa and temperatures between 1730 and 3230 °C, that is similar parameters as for direct graphite-diamond conversion. The addition of a small amount of boron oxide can lower the required pressure to 4–7 GPa and temperature to 1500 °C. As in diamond synthesis, to further reduce the conversion pressures and temperatures, a catalyst is added, such as lithium, potassium, or magnesium, their nitrides, their fluoronitrides, water with ammonium compounds, or hydrazine. Other industrial synthesis methods, again borrowed from diamond growth, use crystal growth in a temperature gradient, or explosive shock wave. The shock wave method is used to produce material called heterodiamond, a superhard compound of boron, carbon, and nitrogen.

Low-pressure deposition of thin films of cubic boron nitride is possible. As in diamond growth, the major problem is to suppress the growth of hexagonal phases (h-BN or graphite, respectively). Whereas in diamond growth this is achieved by adding hydrogen gas, boron trifluoride is used for c-BN. Ion beam deposition, plasma-enhanced chemical vapor deposition, pulsed laser deposition, reactive sputtering, and other physical vapor deposition methods are used as well.

Preparation of wurtzite BN

Wurtzite BN can be obtained via static high-pressure or dynamic shock methods. The limits of its stability are not well defined. Both c-BN and w-BN are formed by compressing h-BN, but formation of w-BN occurs at much lower temperatures close to 1700 °C.

Production statistics

Whereas the production and consumption figures for the raw materials used for BN synthesis, namely boric acid and boron trioxide, are well known (see boron), the corresponding numbers for the boron nitride are not listed in statistical reports. An estimate for the 1999 world production is 300 to 350 metric tons. The major producers and consumers of BN are located in the United States, Japan, China and Germany. In 2000, prices varied from about $75–120/kg for standard industrial-quality h-BN and were about up to $200–400/kg for high purity BN grades.

Applications

Hexagonal BN

Hexagonal BN (h-BN) is the most widely used polymorph. It is a good lubricant at both low and high temperatures (up to 900 °C, even in an oxidizing atmosphere). h-BN lubricant is particularly useful when the electrical conductivity or chemical reactivity of graphite (alternative lubricant) would be problematic. In internal combustion engines, where graphite could be oxidized and turn into carbon sludge, h-BN with its superior thermal stability can be added to engine lubricants. As with all nano-particle suspensions, Brownian-motion settlement is a problem. Settlement can clog engine oil filters, which limits solid lubricant applications in a combustion engine to automotive racing, where engine re-building is common. Since carbon has appreciable solubility in certain alloys (such as steels), which may lead to degradation of properties, BN is often superior for high temperature and/or high pressure applications. Another advantage of h-BN over graphite is that its lubricity does not require water or gas molecules trapped between the layers. Therefore, h-BN lubricants can be used in vacuum, such as space applications. The lubricating properties of fine-grained h-BN are used in cosmetics, paints, dental cements, and pencil leads.

Hexagonal BN was first used in cosmetics around 1940 in Japan. Because of its high price, h-BN was abandoned for this application. Its use was revitalized in the late 1990s with the optimization h-BN production processes, and currently h-BN is used by nearly all leading producers of cosmetic products for foundations, make-up, eye shadows, blushers, kohl pencils, lipsticks and other skincare products.

Because of its excellent thermal and chemical stability, boron nitride ceramics and coatings are used high-temperature equipment. h-BN can be included in ceramics, alloys, resins, plastics, rubbers, and other materials, giving them self-lubricating properties. Such materials are suitable for construction of e.g. bearings and in steelmaking. Many quantum devices use multilayer h-BN as a substrate material. It can also be used as a dielectric in resistive random access memories.

Hexagonal BN is used in xerographic process and laser printers as a charge leakage barrier layer of the photo drum. In the automotive industry, h-BN mixed with a binder (boron oxide) is used for sealing oxygen sensors, which provide feedback for adjusting fuel flow. The binder utilizes the unique temperature stability and insulating properties of h-BN.

Parts can be made by hot pressing from four commercial grades of h-BN. Grade HBN contains a boron oxide binder; it is usable up to 550–850 °C in oxidizing atmosphere and up to 1600 °C in vacuum, but due to the boron oxide content is sensitive to water. Grade HBR uses a calcium borate binder and is usable at 1600 °C. Grades HBC and HBT contain no binder and can be used up to 3000 °C.

Boron nitride nanosheets (h-BN) can be deposited by catalytic decomposition of borazine at a temperature ~1100 °C in a chemical vapor deposition setup, over areas up to about 10 cm. Owing to their hexagonal atomic structure, small lattice mismatch with graphene (~2%), and high uniformity they are used as substrates for graphene-based devices. BN nanosheets are also excellent proton conductors. Their high proton transport rate, combined with the high electrical resistance, may lead to applications in fuel cells and water electrolysis.

h-BN has been used since the mid-2000s as a bullet and bore lubricant in precision target rifle applications as an alternative to molybdenum disulfide coating, commonly referred to as "moly". It is claimed to increase effective barrel life, increase intervals between bore cleaning and decrease the deviation in point of impact between clean bore first shots and subsequent shots.

h-BN is used as a release agent in molten metal and glass applications. For example, ZYP Coatings developed and currently produces a line of paintable h-BN coatings that are used by manufacturers of molten aluminium, non-ferrous metal, and glass. Because h-BN is nonwetting and lubricious to these molten materials, the coated surface (i.e. mold or crucible) does not stick to the material.

Cubic BN

Cubic boron nitride (CBN or c-BN) is widely used as an abrasive. Its usefulness arises from its insolubility in iron, nickel, and related alloys at high temperatures, whereas diamond is soluble in these metals. Polycrystalline c-BN (PCBN) abrasives are therefore used for machining steel, whereas diamond abrasives are preferred for aluminum alloys, ceramics, and stone. When in contact with oxygen at high temperatures, BN forms a passivation layer of boron oxide. Boron nitride binds well with metals due to formation of interlayers of metal borides or nitrides. Materials with cubic boron nitride crystals are often used in the tool bits of cutting tools. For grinding applications, softer binders such as resin, porous ceramics and soft metals are used. Ceramic binders can be used as well. Commercial products are known under names "Borazon" (by Hyperion Materials & Technologies), and "Elbor" or "Cubonite" (by Russian vendors).

Contrary to diamond, large c-BN pellets can be produced in a simple process (called sintering) of annealing c-BN powders in nitrogen flow at temperatures slightly below the BN decomposition temperature. This ability of c-BN and h-BN powders to fuse allows cheap production of large BN parts.

Similar to diamond, the combination in c-BN of highest thermal conductivity and electrical resistivity is ideal for heat spreaders.

As cubic boron nitride consists of light atoms and is very robust chemically and mechanically, it is one of the popular materials for X-ray membranes: low mass results in small X-ray absorption, and good mechanical properties allow usage of thin membranes, further reducing the absorption.

Amorphous BN

Layers of amorphous boron nitride (a-BN) are used in some semiconductor devices, e.g. MOSFETs. They can be prepared by chemical decomposition of trichloroborazine with caesium, or by thermal chemical vapor deposition methods. Thermal CVD can be also used for deposition of h-BN layers, or at high temperatures, c-BN.

Other forms of boron nitride

Atomically thin boron nitride

Hexagonal boron nitride can be exfoliated to mono or few atomic layer sheets. Due to its analogous structure to that of graphene, atomically thin boron nitride is sometimes called white graphene.

Mechanical properties

Atomically thin boron nitride is one of the strongest electrically insulating materials. Monolayer boron nitride has an average Young's modulus of 0.865TPa and fracture strength of 70.5GPa, and in contrast to graphene, whose strength decreases dramatically with increased thickness, few-layer boron nitride sheets have a strength similar to that of monolayer boron nitride.

Thermal conductivity

Atomically thin boron nitride has one of the highest thermal conductivity coefficients (751 W/mK at room temperature) among semiconductors and electrical insulators, and its thermal conductivity increases with reduced thickness due to less intra-layer coupling.

Thermal stability

The air stability of graphene shows a clear thickness dependence: monolayer graphene is reactive to oxygen at 250 °C, strongly doped at 300 °C, and etched at 450 °C; in contrast, bulk graphite is not oxidized until 800 °C. Atomically thin boron nitride has much better oxidation resistance than graphene. Monolayer boron nitride is not oxidized till 700 °C and can sustain up to 850 °C in air; bilayer and trilayer boron nitride nanosheets have slightly higher oxidation starting temperatures. The excellent thermal stability, high impermeability to gas and liquid, and electrical insulation make atomically thin boron nitride potential coating materials for preventing surface oxidation and corrosion of metals and other two-dimensional (2D) materials, such as black phosphorus.

Better surface adsorption

Atomically thin boron nitride has been found to have better surface adsorption capabilities than bulk hexagonal boron nitride. According to theoretical and experimental studies, atomically thin boron nitride as an adsorbent experiences conformational changes upon surface adsorption of molecules, increasing adsorption energy and efficiency. The synergic effect of the atomic thickness, high flexibility, stronger surface adsorption capability, electrical insulation, impermeability, high thermal and chemical stability of BN nanosheets can increase the Raman sensitivity by up to two orders, and in the meantime attain long-term stability and reusability not readily achievable by other materials.

Dielectric properties

Atomically thin hexagonal boron nitride is an excellent dielectric substrate for graphene, molybdenum disulfide (MoS₂), and many other 2D material-based electronic and photonic devices. As shown by electric force microscopy (EFM) studies, the electric field screening in atomically thin boron nitride shows a weak dependence on thickness, which is in line with the smooth decay of electric field inside few-layer boron nitride revealed by the first-principles calculations.

Raman characteristics

Raman spectroscopy has been a useful tool to study a variety of 2D materials, and the Raman signature of high-quality atomically thin boron nitride was first reported by Gorbachev et al. in 2011. and Li et al. However, the two reported Raman results of monolayer boron nitride did not agree with each other. Cai et al., therefore, conducted systematic experimental and theoretical studies to reveal the intrinsic Raman spectrum of atomically thin boron nitride. It reveals that atomically thin boron nitride without interaction with a substrate has a G band frequency similar to that of bulk hexagonal boron nitride, but strain induced by the substrate can cause Raman shifts. Nevertheless, the Raman intensity of G band of atomically thin boron nitride can be used to estimate layer thickness and sample quality.

Boron nitride nanomesh

Boron nitride nanomesh is a nanostructured two-dimensional material. It consists of a single BN layer, which forms by self-assembly a highly regular mesh after high-temperature exposure of a clean rhodium or ruthenium surface to borazine under ultra-high vacuum. The nanomesh looks like an assembly of hexagonal pores. The distance between two pore centers is 3.2 nm and the pore diameter is ~2 nm. Other terms for this material are boronitrene or white graphene.

The boron nitride nanomesh is air-stable and compatible with some liquids. up to temperatures of 800 °C.

Boron nitride nanotubes

Boron nitride tubules were first made in 1989 by Shore and Dolan This work was patented in 1989 and published in 1989 thesis (Dolan) and then 1993 Science. The 1989 work was also the first preparation of amorphous BN by B-trichloroborazine and cesium metal.

Boron nitride nanotubes were predicted in 1994 and experimentally discovered in 1995. They can be imagined as a rolled up sheet of h-boron nitride. Structurally, it is a close analog of the carbon nanotube, namely a long cylinder with diameter of several to hundred nanometers and length of many micrometers, except carbon atoms are alternately substituted by nitrogen and boron atoms. However, the properties of BN nanotubes are very different: whereas carbon nanotubes can be metallic or semiconducting depending on the rolling direction and radius, a BN nanotube is an electrical insulator with a bandgap of ~5.5 eV, basically independent of tube chirality and morphology. In addition, a layered BN structure is much more thermally and chemically stable than a graphitic carbon structure.

Boron nitride aerogel

Boron nitride aerogel is an aerogel made of highly porous BN. It typically consists of a mixture of deformed BN nanotubes and nanosheets. It can have a density as low as 0.6 mg/cm and a specific surface area as high as 1050 m/g, and therefore has potential applications as an absorbent, catalyst support and gas storage medium. BN aerogels are highly hydrophobic and can absorb up to 160 times their weight in oil. They are resistant to oxidation in air at temperatures up to 1200 °C, and hence can be reused after the absorbed oil is burned out by flame. BN aerogels can be prepared by template-assisted chemical vapor deposition using borazine as the feed gas.

Composites containing BN

Addition of boron nitride to silicon nitride ceramics improves the thermal shock resistance of the resulting material. For the same purpose, BN is added also to silicon nitride-alumina and titanium nitride-alumina ceramics. Other materials being reinforced with BN include alumina and zirconia, borosilicate glasses, glass ceramics, enamels, and composite ceramics with titanium boride-boron nitride, titanium boride-aluminium nitride-boron nitride, and silicon carbide-boron nitride composition.

Zirconia Stabilized Boron Nitride (ZSBN) is produced by adding zirconia to BN, enhancing its thermal shock resistance and mechanical strength through a sintering process. It offers better performance characteristics including Superior corrosion and erosion resistance over a wide temperature range. Its unique combination of thermal conductivity, lubricity, mechanical strength, and stability makes it suitable for various applications including cutting tools and wear-resistant coatings, thermal and electrical insulation, aerospace and defense, and high-temperature components.

Pyrolytic boron nitride (PBN)

Pyrolytic boron nitride (PBN), also known as Chemical vapour-deposited Boron Nitride(CVD-BN), is a high-purity ceramic material characterized by exceptional chemical resistance and mechanical strength at high temperatures. Pyrolytic boron nitride is typically prepared through the thermal decomposition of boron trichloride and ammonia vapors on graphite substrates at 1900°C.

Pyrolytic boron nitride (PBN) generally has a hexagonal structure similar to hexagonal boron nitride (hBN), though it can exhibit stacking faults or deviations from the ideal lattice. Pyrolytic boron nitride (PBN) shows some remarkable attributes, including exceptional chemical inertness, high dielectric strength, excellent thermal shock resistance, non-wettability, non-toxicity, oxidation resistance, and minimal outgassing.

Due to a highly ordered planar texture similar to pyrolytic graphite (PG), it exhibits anisotropic properties such as lower dielectric constant vertical to the crystal plane and higher bending strength along the crystal plane. PBN material has been widely manufactured as crucibles of compound semiconductor crystals, output windows and dielectric rods of traveling-wave tubes, high-temperature jigs and insulator.

Health issues

Boron nitride (along with Si₃N₄, NbN, and BNC) is generally considered to be non-toxic and does not exhibit chemical activity in biological systems. Due to its excellent safety profile and lubricious properties, boron nitride finds widespread use in various applications, including cosmetics and food processing equipment.

See also

• Beta carbon nitride
• Borazon
• Borocarbonitrides
• Boron suboxide
• Superhard materials
• Wide-bandgap semiconductors

Notes

1. Here wetting refers to the ability of a molten metal to keep contact with solid BN

References

1. ^ for h-BN
2. ^ Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 5.6. ISBN 1-4398-5511-0.
3. ^ Brazhkin, Vadim V.; Solozhenko, Vladimir L. (2019). "Myths about new ultrahard phases: Why materials that are significantly superior to diamond in elastic moduli and hardness are impossible". Journal of Applied Physics. 125 (13): 130901. arXiv:1811.09503. Bibcode:2019JAP...125m0901B. doi:10.1063/1.5082739. S2CID 85517548.
4. Balmain, W. H. (October 1842). "Observations on the formation of compounds of boron and silicon with nitrogen and certain metals". The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science. 21 (138): 270–277. doi:10.1080/14786444208621545. ISSN 1941-5966.
5. Kawaguchi, M.; et al. (2008). "Electronic Structure and Intercalation Chemistry of Graphite-Like Layered Material with a Composition of BC6N". Journal of Physics and Chemistry of Solids. 69 (5–6): 1171. Bibcode:2008JPCS...69.1171K. doi:10.1016/j.jpcs.2007.10.076.
6. Ba K, Jiang W, Cheng J, Bao J, et al. (2017). "Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride". Scientific Reports. 7 (1): 45584. Bibcode:2017NatSR...745584B. doi:10.1038/srep45584. PMC 5377335. PMID 28367992. S2CID 22951232.
7. Silberberg, M. S. (2009). Chemistry: The Molecular Nature of Matter and Change (5th ed.). New York: McGraw-Hill. p. 483. ISBN 978-0-07-304859-8.
8. Griggs, Jessica (2014-05-13). "Diamond no longer nature's hardest material". New Scientist. Retrieved 2018-01-12.
9. Delhaes, P. (2001). Graphite and Precursors. CRC Press. ISBN 978-9056992286.
10. ^ "BN – Boron Nitride". Ioffe Institute Database.
11. Zedlitz, R. (1996). "Properties of Amorphous Boron Nitride Thin Films". Journal of Non-Crystalline Solids. 198–200 (Part 1): 403. Bibcode:1996JNCS..198..403Z. doi:10.1016/0022-3093(95)00748-2.
12. Henager, C. H. Jr. (1993). "Thermal Conductivities of Thin, Sputtered Optical Films". Applied Optics. 32 (1): 91–101. Bibcode:1993ApOpt..32...91H. doi:10.1364/AO.32.000091. PMID 20802666.
13. Weissmantel, S. (1999). "Microstructure and Mechanical Properties of Pulsed Laser Deposited Boron Nitride Films". Diamond and Related Materials. 8 (2–5): 377. Bibcode:1999DRM.....8..377W. doi:10.1016/S0925-9635(98)00394-X.
14. ^ Leichtfried, G.; et al. (2002). "13.5 Properties of diamond and cubic boron nitride". In P. Beiss; et al. (eds.). Landolt-Börnstein – Group VIII Advanced Materials and Technologies: Powder Metallurgy Data. Refractory, Hard and Intermetallic Materials. Landolt-Börnstein - Group VIII Advanced Materials and Technologies. Vol. 2A2. Berlin: Springer. pp. 118–139. doi:10.1007/b83029. ISBN 978-3-540-42961-6.
15. Su, C. (2022). "Tuning colour centres at a twisted hexagonal boron nitride interface". Nature Materials. 21 (8): 896–902. Bibcode:2022NatMa..21..896S. doi:10.1038/s41563-022-01303-4. OSTI 1906698. PMID 35835818. S2CID 250535073.
16. Tararan, Anna; di Sabatino, Stefano; Gatti, Matteo; Taniguchi, Takashi; Watanabe, Kenji; Reining, Lucia; Tizei, Luiz H. G.; Kociak, Mathieu; Zobelli, Alberto (2018). "Optical gap and optically active intragap defects in cubic BN". Phys. Rev. B. 98 (9): 094106. arXiv:1806.11446. Bibcode:2018PhRvB..98i4106T. doi:10.1103/PhysRevB.98.094106. S2CID 119097213.
17. Crane, T. P.; Cowan, B. P. (2000). "Magnetic Relaxation Properties of Helium-3 Adsorbed on Hexagonal Boron Nitride". Physical Review B. 62 (17): 11359. Bibcode:2000PhRvB..6211359C. doi:10.1103/PhysRevB.62.11359.
18. Pan, Z.; et al. (2009). "Harder than Diamond: Superior Indentation Strength of Wurtzite BN and Lonsdaleite". Physical Review Letters. 102 (5): 055503. Bibcode:2009PhRvL.102e5503P. doi:10.1103/PhysRevLett.102.055503. PMID 19257519.
19. Tian, Yongjun; et al. (2013). "Ultrahard nanotwinned cubic boron nitride". Nature. 493 (7432): 385–8. Bibcode:2013Natur.493..385T. doi:10.1038/nature11728. PMID 23325219. S2CID 4419843.
20. ^ Engler, M. (2007). "Hexagonal Boron Nitride (hBN) – Applications from Metallurgy to Cosmetics" (PDF). Cfi/Ber. DKG. 84: D25. ISSN 0173-9913.
21. Kubota, Y.; et al. (2007). "Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure". Science. 317 (5840): 932–4. Bibcode:2007Sci...317..932K. doi:10.1126/science.1144216. PMID 17702939.
22. Watanabe, K.; Taniguchi, T.; Kanda, H. (2004). "Direct-Bandgap Properties and Evidence for Ultraviolet Lasing of Hexagonal Boron Nitride Single Crystal". Nature Materials. 3 (6): 404–9. Bibcode:2004NatMa...3..404W. doi:10.1038/nmat1134. PMID 15156198. S2CID 23563849.
23. Taniguchi, T.; et al. (2002). "Ultraviolet Light Emission from Self-Organized p–n Domains in Cubic Boron Nitride Bulk Single Crystals Grown Under High Pressure". Applied Physics Letters. 81 (22): 4145. Bibcode:2002ApPhL..81.4145T. doi:10.1063/1.1524295.
24. Dreger, Lloyd H.; et al. (1962). "Sublimation and Decomposition Studies on Boron Nitride and Aluminum Nitride". The Journal of Physical Chemistry. 66 (8): 1556. doi:10.1021/j100814a515.
25. Wentorf, R. H. (1957). "Cubic Form of Boron Nitride". The Journal of Chemical Physics. 26 (4): 956. Bibcode:1957JChPh..26..956W. doi:10.1063/1.1745964.
26. Lan, J. H.; et al. (2009). "Thermal Transport in Hexagonal Boron Nitride Nanoribbons". Physical Review B. 79 (11): 115401. Bibcode:2009PhRvB..79k5401L. doi:10.1103/PhysRevB.79.115401.
27. Hu J, Ruan X, Chen YP (2009). "Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: A Molecular Dynamics Study". Nano Letters. 9 (7): 2730–5. arXiv:1008.1300. Bibcode:2009NanoL...9.2730H. doi:10.1021/nl901231s. PMID 19499898. S2CID 1157650.
28. Ouyang, Tao; Chen, Yuanping; Xie, Yuee; Yang, Kaike; Bao, Zhigang; Zhong, Jianxin (2010). "Thermal Transport in Hexagonal Boron Nitride Nanoribbons". Nanotechnology. 21 (24): 245701. Bibcode:2010Nanot..21x5701O. doi:10.1088/0957-4484/21/24/245701. PMID 20484794. S2CID 12898097.
29. Falin, Aleksey; Cai, Qiran; Santos, Elton J. G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji; Taniguchi, Takashi; Barnett, Matthew R.; Chen, Ying; Ruoff, Rodney S.; Li, Lu Hua (2017-06-22). "Mechanical properties of atomically thin boron nitride and the role of interlayer interactions". Nature Communications. 8 (1): 15815. arXiv:2008.01657. Bibcode:2017NatCo...815815F. doi:10.1038/ncomms15815. ISSN 2041-1723. PMC 5489686. PMID 28639613.
30. Bosak, Alexey; Serrano, Jorge; Krisch, Michael; Watanabe, Kenji; Taniguchi, Takashi; Kanda, Hisao (2006-01-19). "Elasticity of hexagonal boron nitride: Inelastic x-ray scattering measurements". Physical Review B. 73 (4): 041402. Bibcode:2006PhRvB..73d1402B. doi:10.1103/PhysRevB.73.041402. ISSN 1098-0121.
31. Thomas, Siby; Ajith, K M; Valsakumar, M C (2016-07-27). "Directional anisotropy, finite size effect and elastic properties of hexagonal boron nitride". Journal of Physics: Condensed Matter. 28 (29): 295302. Bibcode:2016JPCM...28C5302T. doi:10.1088/0953-8984/28/29/295302. ISSN 0953-8984. PMID 27255345.
32. Ahmed, Tousif; Procak, Allison; Hao, Tengyuan; Hossain, Zubaer M. (2019-04-17). "Strong anisotropy in strength and toughness in defective hexagonal boron nitride". Physical Review B. 99 (13): 134105. Bibcode:2019PhRvB..99m4105A. doi:10.1103/PhysRevB.99.134105. ISSN 2469-9950.
33. Dobrzhinetskaya, L.F.; et al. (2013). "Qingsongite, IMA 2013-030". CNMNC Newsletter. 16: 2708.
34. Dobrzhinetskaya, L.F.; et al. (2014). "Qingsongite, natural cubic boron nitride: The first boron mineral from the Earth's mantle" (PDF). American Mineralogist. 99 (4): 764–772. Bibcode:2014AmMin..99..764D. doi:10.2138/am.2014.4714. S2CID 130947756. Archived (PDF) from the original on 2022-10-09.
35. "Qingsongite".
36. "List of Minerals". 21 March 2011.
37. ^ Rudolph, S. (2000). "Boron Nitride (BN)". American Ceramic Society Bulletin. 79: 50. Archived from the original on 2012-03-06.
38. "Synthesis of Boron Nitride from Oxide Precursors". Archived from the original on December 12, 2007. Retrieved 2009-06-06.
39. ^ Mirkarimi, P. B.; et al. (1997). "Review of Advances in Cubic Boron Nitride Film Synthesis". Materials Science and Engineering: R: Reports. 21 (2): 47–100. doi:10.1016/S0927-796X(97)00009-0.
40. Paine, Robert T.; Narula, Chaitanya K. (1990). "Synthetic Routes to Boron Nitride". Chemical Reviews. 90: 73–91. doi:10.1021/cr00099a004.
41. Tornieporth-Oetting, I.; Klapötke, T. (1990). "Nitrogen Triiodide". Angewandte Chemie International Edition. 29 (6): 677–679. doi:10.1002/anie.199006771.
42. Housecroft, Catherine E.; Sharpe, Alan G. (2005). Inorganic Chemistry (2d ed.). Pearson education. p. 318. ISBN 978-0-13-039913-7.
43. Solozhenko, V. L.; et al. (2002). "In situ Studies of Boron Nitride Crystallization from BN Solutions in Supercritical N–H Fluid at High Pressures and Temperatures". Physical Chemistry Chemical Physics. 4 (21): 5386. Bibcode:2002PCCP....4.5386S. doi:10.1039/b206005a.
44. Doll, G. L.; et al. (1989). "Intercalation of Hexagonal Boron Nitride with Potassium". Journal of Applied Physics. 66 (6): 2554. Bibcode:1989JAP....66.2554D. doi:10.1063/1.344219.
45. Wentorf, R. H. Jr. (March 1961). "Synthesis of the Cubic Form of Boron Nitride". Journal of Chemical Physics. 34 (3): 809–812. Bibcode:1961JChPh..34..809W. doi:10.1063/1.1731679.
46. ^ Vel, L.; et al. (1991). "Cubic Boron Nitride: Synthesis, Physicochemical Properties and Applications". Materials Science and Engineering: B. 10 (2): 149. doi:10.1016/0921-5107(91)90121-B.
47. Fukunaga, O. (2002). "Science and Technology in the Recent Development of Boron Nitride Materials". Journal of Physics: Condensed Matter. 14 (44): 10979. Bibcode:2002JPCM...1410979F. doi:10.1088/0953-8984/14/44/413. S2CID 250835481.
48. Komatsu, T.; et al. (1999). "Creation of Superhard B–C–N Heterodiamond Using an Advanced Shock Wave Compression Technology". Journal of Materials Processing Technology. 85 (1–3): 69. doi:10.1016/S0924-0136(98)00263-5.
49. Soma, T.; et al. (1974). "Characterization of Wurtzite Type Boron Nitride Synthesized by Shock Compression". Materials Research Bulletin. 9 (6): 755. doi:10.1016/0025-5408(74)90110-X.
50. ^ Greim, Jochen; Schwetz, Karl A. (2005). "Boron Carbide, Boron Nitride, and Metal Borides". Ullmann's Encyclopedia of Industrial Chemistry. Weinheim: Wiley-VCH. doi:10.1002/14356007.a04_295.pub2. ISBN 978-3527306732.
51. Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017-01-01). "Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride". Advanced Functional Materials. 27 (10): 1604811. doi:10.1002/adfm.201604811. hdl:11380/1129421. S2CID 100500198.
52. Puglisi, F. M.; Larcher, L.; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. (2016-12-01). "2D h-BN based RRAM devices". 2016 IEEE International Electron Devices Meeting (IEDM). pp. 34.8.1–34.8.4. doi:10.1109/IEDM.2016.7838544. ISBN 978-1-5090-3902-9. S2CID 28059875.
53. Schein, L. B. (1988). "Electrophotography and Development Physics". Physics Today. Springer Series in Electrophysics. 14 (12). Berlin: Springer-Verlag: 66–68. Bibcode:1989PhT....42l..66S. doi:10.1063/1.2811250. ISBN 9780387189024.
54. Harper, Charles A. (2001). Handbook of Ceramics, Glasses and Diamonds. McGraw-Hill. ISBN 978-0070267121.
55. Park, Ji-Hoon; Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun; Luong, Dinh Hoa; Kim, Soo Min; Choi, Soo Ho; Yang, Woochul; Kong, Jing; Kim, Ki Kang; Lee, Young Hee (2014). "Large-Area Monolayer Hexagonal Boron Nitride on Pt Foil". ACS Nano. 8 (8): 8520–8. doi:10.1021/nn503140y. PMID 25094030.
56. Hu, S.; et al. (2014). "Proton transport through one-atom-thick crystals". Nature. 516 (7530): 227–230. arXiv:1410.8724. Bibcode:2014Natur.516..227H. doi:10.1038/nature14015. PMID 25470058. S2CID 4455321.
57. "Hexagonal Boron Nitride (HBN)—How Well Does It Work?". AccurateShooter.com. 8 September 2014. Retrieved 28 December 2015.
58. "colourdeverre.com/img/projects/advancedpriming.pdf" (PDF).
59. "Wettability, Spreading, and Interfacial Phenomena in High-Temperature Coatings".
60. "Substrate Release Mechanisms for Gas Metal Arc 3-D Aluminum Metal Printing. 3D Printing &Additive Manufacturing".
61. "Wear properties of squeeze cast in situ Mg2Si–A380 alloy".
62. "INTERFACIAL REACTION WETTING IN THE BORON NITRIDE/MOLTEN ALUMINUM SYSTEM" (PDF).
63. Todd RH, Allen DK, Dell KAlting L (1994). Manufacturing Processes Reference Guide. Industrial Press Inc. pp. 43–48. ISBN 978-0-8311-3049-7.
64. "Diamond and Cubic Boron Nitride (CBN) Abrasives". Hyperion Materials & Technologies. Retrieved 21 June 2022.
65. El Khakani, M. A.; Chaker, M. (1993). "Physical Properties of the X-Ray Membrane Materials". Journal of Vacuum Science and Technology B. 11 (6): 2930–2937. Bibcode:1993JVSTB..11.2930E. doi:10.1116/1.586563.
66. Schmolla, W. (1985). "Positive Drift Effect of BN-InP Enhancement N-Channel MISFET". International Journal of Electronics. 58: 35. doi:10.1080/00207218508939000.
67. Li, Lu Hua; Chen, Ying (2016). "Atomically Thin Boron Nitride: Unique Properties and Applications". Advanced Functional Materials. 26 (16): 2594–2608. arXiv:1605.01136. Bibcode:2016arXiv160501136L. doi:10.1002/adfm.201504606. S2CID 102038593.
68. Falin, Aleksey; Cai, Qiran; Santos, Elton J.G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji (2017-06-22). "Mechanical properties of atomically thin boron nitride and the role of interlayer interactions". Nature Communications. 8: 15815. arXiv:2008.01657. Bibcode:2017NatCo...815815F. doi:10.1038/ncomms15815. PMC 5489686. PMID 28639613.
69. Cai, Qiran; Scullion, Declan; Gan, Wei; Falin, Alexey; Zhang, Shunying; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying; Santos, Elton J. G. (2019). "High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion". Science Advances. 5 (6): eaav0129. arXiv:1903.08862. Bibcode:2019SciA....5..129C. doi:10.1126/sciadv.aav0129. ISSN 2375-2548. PMC 6555632. PMID 31187056.
70. ^ Li, Lu Hua; Santos, Elton J. G.; Xing, Tan; Cappelluti, Emmanuele; Roldán, Rafael; Chen, Ying; Watanabe, Kenji; Taniguchi, Takashi (2015). "Dielectric Screening in Atomically Thin Boron Nitride Nanosheets". Nano Letters. 15 (1): 218–223. arXiv:1503.00380. Bibcode:2015NanoL..15..218L. doi:10.1021/nl503411a. PMID 25457561. S2CID 207677623.
71. ^ Li, Lu Hua; Cervenka, Jiri; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying (2014). "Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets". ACS Nano. 8 (2): 1457–1462. arXiv:1403.1002. Bibcode:2014arXiv1403.1002L. doi:10.1021/nn500059s. PMID 24400990. S2CID 5372545.
72. Li, Lu Hua; Xing, Tan; Chen, Ying; Jones, Rob (2014). "Nanosheets: Boron Nitride Nanosheets for Metal Protection (Adv. Mater. Interfaces 8/2014)". Advanced Materials Interfaces. 1 (8): n/a. doi:10.1002/admi.201470047.
73. Liu, Zheng; Gong, Yongji; Zhou, Wu; Ma, Lulu; Yu, Jingjiang; Idrobo, Juan Carlos; Jung, Jeil; MacDonald, Allan H.; Vajtai, Robert (2013-10-04). "Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride". Nature Communications. 4 (1): 2541. Bibcode:2013NatCo...4.2541L. doi:10.1038/ncomms3541. PMID 24092019.
74. Chen, Xiaolong; Wu, Yingying; Wu, Zefei; Han, Yu; Xu, Shuigang; Wang, Lin; Ye, Weiguang; Han, Tianyi; He, Yuheng (2015-06-23). "High-quality sandwiched black phosphorus heterostructure and its quantum oscillations". Nature Communications. 6 (1): 7315. arXiv:1412.1357. Bibcode:2015NatCo...6.7315C. doi:10.1038/ncomms8315. PMC 4557360. PMID 26099721.
75. Cai, Qiran; Du, Aijun; Gao, Guoping; Mateti, Srikanth; Cowie, Bruce C. C.; Qian, Dong; Zhang, Shuang; Lu, Yuerui; Fu, Lan (2016-08-29). "Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption". Advanced Functional Materials. 26 (45): 8202–8210. arXiv:1612.02883. Bibcode:2016arXiv161202883C. doi:10.1002/adfm.201603160. S2CID 13800939.
76. Cai, Qiran; Mateti, Srikanth; Yang, Wenrong; Jones, Rob; Watanabe, Kenji; Taniguchi, Takashi; Huang, Shaoming; Chen, Ying; Li, Lu Hua (2016-05-20). "Inside Back Cover: Boron Nitride Nanosheets Improve Sensitivity and Reusability of Surface-Enhanced Raman Spectroscopy (Angew. Chem. Int. Ed. 29/2016)". Angewandte Chemie International Edition. 55 (29): 8457. doi:10.1002/anie.201604295. hdl:10536/DRO/DU:30086239.
77. Cai, Qiran; Mateti, Srikanth; Watanabe, Kenji; Taniguchi, Takashi; Huang, Shaoming; Chen, Ying; Li, Lu Hua (2016-06-14). "Boron Nitride Nanosheet-Veiled Gold Nanoparticles for Surface-Enhanced Raman Scattering". ACS Applied Materials & Interfaces. 8 (24): 15630–15636. arXiv:1606.07183. Bibcode:2016arXiv160607183C. doi:10.1021/acsami.6b04320. PMID 27254250. S2CID 206424168.
78. Gorbachev, Roman V.; Riaz, Ibtsam; Nair, Rahul R.; Jalil, Rashid; Britnell, Liam; Belle, Branson D.; Hill, Ernie W.; Novoselov, Kostya S.; Watanabe, Kenji (2011-01-07). "Hunting for Monolayer Boron Nitride: Optical and Raman Signatures". Small. 7 (4): 465–468. arXiv:1008.2868. doi:10.1002/smll.201001628. PMID 21360804. S2CID 17344540.
79. Cai, Qiran; Scullion, Declan; Falin, Aleksey; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying; Santos, Elton J. G.; Li, Lu Hua (2017). "Raman signature and phonon dispersion of atomically thin boron nitride". Nanoscale. 9 (9): 3059–3067. arXiv:2008.01656. doi:10.1039/c6nr09312d. PMID 28191567. S2CID 206046676.
80. ^ Song, Yangxi; Li, Bin; Yang, Siwei; Ding, Guqiao; Zhang, Changrui; Xie, Xiaoming (2015). "Ultralight boron nitride aerogels via template-assisted chemical vapor deposition". Scientific Reports. 5: 10337. Bibcode:2015NatSR...510337S. doi:10.1038/srep10337. PMC 4432566. PMID 25976019.
81. ^ Corso, M.; et al. (2004). "Boron Nitride Nanomesh". Science. 303 (5655): 217–220. Bibcode:2004Sci...303..217C. doi:10.1126/science.1091979. PMID 14716010. S2CID 11964344.
82. Goriachko, A.; et al. (2007). "Self-Assembly of a Hexagonal Boron Nitride Nanomesh on Ru(0001)". Langmuir. 23 (6): 2928–2931. doi:10.1021/la062990t. PMID 17286422.
83. Graphene and Boronitrene (White Graphene) Archived 2018-05-28 at the Wayback Machine. physik.uni-saarland.de
84. Bunk, O.; et al. (2007). "Surface X-Ray Diffraction Study of Boron-Nitride Nanomesh in Air". Surface Science. 601 (2): L7–L10. Bibcode:2007SurSc.601L...7B. doi:10.1016/j.susc.2006.11.018.
85. Berner, S.; et al. (2007). "Boron Nitride Nanomesh: Functionality from a Corrugated Monolayer". Angewandte Chemie International Edition. 46 (27): 5115–5119. doi:10.1002/anie.200700234. PMID 17538919.
86. Widmer, R.; et al. (2007). "Electrolytic in situ STM Investigation of h-BN-Nanomesh" (PDF). Electrochemical Communications. 9 (10): 2484–2488. doi:10.1016/j.elecom.2007.07.019. Archived (PDF) from the original on 2022-10-09.
87. Kim, Keun Su; Jakubinek, Michael B.; Martinez-Rubi, Yadienka; Ashrafi, Behnam; Guan, Jingwen; O'Neill, K.; Plunkett, Mark; Hrdina, Amy; Lin, Shuqiong; Dénommée, Stéphane; Kingston, Christopher; Simard, Benoit (2015). "Polymer nanocomposites from free-standing, macroscopic boron nitride nanotube assemblies". RSC Adv. 5 (51): 41186. Bibcode:2015RSCAd...541186K. doi:10.1039/C5RA02988K.
88. Rubio, A.; et al. (1994). "Theory of Graphitic Boron Nitride Nanotubes". Physical Review B. 49 (7): 5081–5084. Bibcode:1994PhRvB..49.5081R. doi:10.1103/PhysRevB.49.5081. PMID 10011453.
89. Chopra, N. G.; et al. (1995). "Boron Nitride Nanotubes". Science. 269 (5226): 966–7. Bibcode:1995Sci...269..966C. doi:10.1126/science.269.5226.966. PMID 17807732. S2CID 28988094.
90. Blase, X.; et al. (1994). "Stability and Band Gap Constancy of Boron Nitride Nanotubes". Europhysics Letters (EPL). 28 (5): 335. Bibcode:1994EL.....28..335B. doi:10.1209/0295-5075/28/5/007. S2CID 120010610.
91. Han, Wei-Qiang; et al. (2002). "Transformation of B_xC_yN_z Nanotubes to Pure BN Nanotubes" (PDF). Applied Physics Letters. 81 (6): 1110. Bibcode:2002ApPhL..81.1110H. doi:10.1063/1.1498494.
92. Golberg, D.; Bando, Y.; Tang, C. C.; Zhi, C. Y. (2007). "Boron Nitride Nanotubes". Advanced Materials. 19 (18): 2413. Bibcode:2007AdM....19.2413G. doi:10.1002/adma.200700179. S2CID 221149452.
93. Lee, S. M. (1992). Handbook of Composite Reinforcements. John Wiley and Sons. ISBN 978-0471188612.
94. Lisa, Ross. "Diverse Classification Factors of Boron Nitride and Their Correlation with PBN, HBN, CBN, and ZSBN Variants". Precise Ceramics. Retrieved June 8, 2024.
95. New Steel: Mini & Integrated Mill Management and Technologies. Chilton Publishing. 1996. pp. 51–56.
96. Hayat, Asif; Sohail, Muhammad; Hamdy, Mohamed (2022). "Fabrication, characteristics, and applications of boron nitride and their composite nanomaterials". Surfaces and Interfaces. 29. doi:10.1016/j.surfin.2022.101725. Retrieved June 8, 2024.
97. Eichler, Jens; Lesniak, Cristoph (2008). "Boron nitride (BN) and BN composites for high-temperature applications". Journal of the European Ceramic Society. 28 (5): 1105–1109. doi:10.1016/j.jeurceramsoc.2007.09.005.
98. Rose, Lisa. "About Pyrolytic Boron Nitride". Precise Ceramic. Retrieved May 31, 2024.
99. "Pyrolytic Boron Nitride (PBN)". Shin-Etsu Chemical Co., Ltd. Retrieved May 31, 2024.
100. Moore, A. (1969-03-22). "Compression Annealing of Pyrolytic Boron Nitride". Nature. 221 (5186): 1133–1135. Bibcode:1969Natur.221.1133M. doi:10.1038/2211133a0. Retrieved May 31, 2024.
101. "An Overview of Pyrolytic Boron Nitride (PBN)". Sputter Targets. 3 December 2018. Retrieved May 31, 2024.
102. Lipp, A.; Schwetz, K.A.; Hunold, K. (1989). "Hexagonal boron nitride: Fabrication, properties and applications". Journal of the European Ceramic Society. 5 (1): 3–9. doi:10.1016/0955-2219(89)90003-4.
103. Moore, A.W. (1990). "Characterization of pyrolytic boron nitride for semiconductor materials processing". Journal of Crystal Growth. 106 (1): 6–15. Bibcode:1990JCrGr.106....6M. doi:10.1016/0022-0248(90)90281-O.
104. Rebillat, F.; Guette, A. (1997). "Highly ordered pyrolytic BN obtained by LPCVD". Journal of the European Ceramic Society. 17 (12): 1403–1414. doi:10.1016/S0955-2219(96)00244-0.
105. Gao, Shitao; Li, Bin (2018). "Micromorphology and structure of pyrolytic boron nitride synthesized by chemical vapor deposition from borazine". Ceramics International. 44 (10): 11424–11430. doi:10.1016/j.ceramint.2018.03.201.
106. "EWG Skin Deep® | What is BORON NITRIDE". EWG. Retrieved 2023-07-26.
107. "UNII - 2U4T60A6YD". precision.fda.gov. Retrieved 2023-07-26.
108. "NSF International / Nonfood Compounds Registration Program" (PDF).

External links

• National Pollutant Inventory: Boron and Compounds
• Materials Safety Data Sheet at University of Oxford

• Boron compounds
• Ceramic materials
• Nitrides
• III-V semiconductors
• Non-petroleum based lubricants
• Dry lubricants
• Abrasives
• Superhard materials
• Neutron poisons
• Monolayers
• III-V compounds
• Boron–nitrogen compounds
• Zincblende crystal structure
• Wurtzite structure type